Magnetoelectric properties of new diluted magnetic semiconductor LiMgN with different concentrations of Mn doping
Chengxu DU,Jian XU,Ting CHEN,Xingxing PANG,Yanghua LIU,Zhimin WU
DOI: https://doi.org/10.3969/j.issn.1001-9731.2018.02.016
2018-01-01
Abstract:Using first-principles density functional theory based on the full potential linearized augmented plane wave method and generalized gradient approximation(GGA),the geometric structures of pure LiMgN,different concentrations of Mn-doped LiMgN,and different concentrations of Mn-doped LiMgN with either excess Li or Li deficiency are optimized,and their electronic structures,half-metallic properties and magnetoelectric properties are calculated.The results show that in the systems of Li1±y (Mg1-xMnx)N (x,y =0.0625,x,y =0.125),a 100% spin injectors is revealed,and the materials exhibit half metallic.When Mn is doping LiMgN,the width of impurity band and Curie temperature increased with the increase of Mn concentration.In the Li-deficiency compounds,with the increase of Mn concentration,band gap value of system decreases and the conductive capability increased.In the Li-excess compounds,impurity band width and semimetal energy gap are the largest,which can realize to improve the Curie temperature of Mn doping LiMgN system,while band gap achieves the minimum value at 6.25% Mn concentration.It indicates that Mn doping LiMgN system can be regulated by changing the concentration of Mn and the content of Li to implement electrical and magnetic control.