Study on the Fabrication and Properties of GaN-Based Diluted Magnetic Semiconductors

Xie Zili,Zhang Rong,Cui Xugao,Tao Zhikuo,Xiu Xiangqian,Liu Bin,Li Yi,Fu Deyi,Song Lihong,Cui Yingchao,Han Ping,Shi Yi
2008-01-01
Abstract:The Ga1-xMnxN DMS materials were grown on c-sapphire substrates by metalorganic chemical vapor deposition.Surface structure was characterized by atomic force microscopy and Mn as a surfactant was detected.Crystalline quality was measured by X-ray diffraction and Raman scattering.None of second phases were detected for these samples at low(<2.7%)Mn concentrations,but the second phases were observed when the Mn doping concentration was 3.9%.An emission band and an absorption band were detected by optical measurements methods.They are both attributed to some Mn-related levels.
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