Abstract:Nominally 45 nm GaN:Mg/ 5 nm (Ga,Mn)N / 45 nm GaN:Mg trilayers structures prepared by molecular beam epitaxy on GaN-buffered Al2O3 substrates are investigated to verify whether the indirect co-doping by holes from the cladding layers can alter the spin-spin interaction in (Ga,Mn)N. The four investigated structures, differing with the Mg doping level, are carefully characterized at the nanoscale by HRTEM, EDX, and by SIMS. HRTEM decisively excluded a presence of foreign Mn-rich phases. The structures, up to medium Mg doping, show no Mg over-doping effects. Magnetic studies of these structures are aided by the employment of a dedicated experimental approach of the in situ compensation of the magnetic contribution from the substrate, allowing up to about fifty-fold reduction of this contribution. This technique, dedicated to these structures, simultaneously provides a tenfold reduction of temporal instabilities of the magnetometric unit and lowers the experimental jitter to merely $5 \times 10^{-7}$~emu at 70~kOe, vastly increasing the precision and the credibility of the results of the standard integral SQUID magnetometry in high magnetic fields. The magnetic characteristics of the trilayers structures established here prove identical with the already known properties of the thick (Ga,Mn)N single layers, namely (i) the low temperature ferromagnetism among Mn$^{3+}$ ions driven by superexchange and (ii) purely paramagnetic response at higher temperatures. The possible cause of the lack of any effects brought about by the adjacent Mg-doping is a presence of residual Mn in the cladding layers, resulting in the deactivation of the p-type doping intended there. This finding points out that a more intensive technological effort has to be exerted to promote the co-doping-driven carrier-mediated ferromagnetic coupling in Mn-enriched GaN, especially at elevated temperatures.

Enhanced ferromagnetism and tunable saturation magnetization of Mn/C-codoped GaN nanostructures synthesized by carbothermal nitridation.

Enhanced Ferromagnetism in Nanoscale GaN:Mn Wires Grown on GaN Ridges

Ab initio study of electronic and magnetic properties of the C-codoped Ga 1 − x Mn x N ( 10 1 ¯ 0 ) surface

Ab initio study of electronic and magnetic properties of the C-codoped Ga1−xMnxN „101̄0... surface

Structural And Magnetic Properties In Mn-Doped Gan Grown By Metal Organic Chemical Vapor Deposition

Ab Initio Study Of Electronic And Magnetic Properties Of The C-Codoped Ga1-Xmnxn (10(1)Over-Bar0) Surface

Studies on Structural and Magnetic Properties in Mn-Doped GaN

Microstructural Properties of Over-Doped Gan-Based Diluted Magnetic Semiconductors Grown by Mocvd

Improved-Sensitivity Integral SQUID Magnetometry of (Ga,Mn)N Thin Films in Proximity to Mg-doped GaN

Influence of oxygen impurities in generating ferromagnetism in GaN doped with Mn, Fe, and Cr

Magnetism and luminescence evolution due to nitrogen doping in manganese–gallium oxide nanowires

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Structural, Optical and Magnetic Properties of Ga1−xMnxN Films Grown by MOCVD

Synthesis, Structural and Magnetic Properties of Cobalt-Doped GaN Nanowires on Si by Atmospheric Pressure Chemical Vapor Deposition

Experimental and Theoretical Studies on the Influence of Unintentionally Doped Carbon on Magnetic Properties in ZnMnO:N

The effects of oxygen co‐doping on structural, magnetic and optical properties of Mn‐doped GaN

Influence of Si Co-Doping on Magnetic, Electrical and Optical Properties of Ga1–x Mn X N Film Grown by MOCVD

Study on the Fabrication and Properties of GaN-Based Diluted Magnetic Semiconductors

Ferromagnetism of Mn-doped GaN polycrystalline powders

Ferromagnetism in Mn-doped GaN Nanowires.

Research on the Mn-implanted GaN with Ferromagnetism at Room Temperature