Abstract:Carbon impurities are usually unintentionally doped in N-doped ZnO when attempting to realize p-type conductivity by metal-organic chemical vapor deposition. Mn–N co-doping technique, which is developed to realize hole-mediated room temperature ferromagnetism in ZnO, may further enhance the carbon incorporation. In this work, two kinds of Mn–N co-doped samples, grown at low temperature (400°C) and high temperature (600°C), respectively, have been compared to study the influences of carbon impurities. In contrast to that found on N mono-doped ZnO, an enhanced incorporation of carbon impurities is observed in the high-temperature-grown Mn–N co-doped sample with the conductivity changed from p to n type. According to X-ray photoelectron spectroscopy measurement, the compensation effect from carbon impurities is applied to elucidate the origin of the conductivity transition. Correspondingly, superconducting quantum interference device measurement certainly shows a much smaller value of the saturation magnetization for the high-temperature-grown sample. A possible effect from carbon related complexes on magnetization is also proposed to explain the decrease of the magnetic moment from the view of weakened spin polarization induced by unintentionally incorporated carbon. This assumption is further supported by the first-principle calculation on the Mn–N co-doped ZnO system with carbon incorporation.

Experimental and Theoretical Studies on the Influence of Unintentionally Doped Carbon on Magnetic Properties in ZnMnO:N

Influences of unintentionally doped carbon on magnetic properties in Mn–N co-doped ZnO

Experimental and Theoretical Studies on the Magnetic Property of Carbon-Doped ZnO

Mn Incorporation Induced Changes On Structure And Properties Of N-Doped Zno

Temperature-dependent Magnetization in (mn, N)-codoped ZnO-based Diluted Magnetic Semiconductors

Influence of N Dopant on the Electric and Magnetic Properties of Co Doped ZnO Thin Films

Hydrogen Diffusion Behavior and Its Effect on Magnetic Properties in (mn, N)-Codoped Zno

Magnetic and Transport Properties of (mn, Co)-Codoped Zno Films Prepared by Radio-Frequency Magnetron Cosputtering

Electronic Structure and Magnetic Properties of （mn, N）-codoped ZnO

Research on Ferromagnetism Stabilization and Electronic Structure of (mn, N)-codoped ZnO by First Principles

Activation of Room-Temperature Ferromagnetism in Mn Doped Zno Thin Films by N Codoping

Study of influence of the vacuum annealing on physical properties of ZnMnO:N

Experimental And Theoretical Investigations On Ferromagnetic Nature Of Mn-Doped Dilute Magnetic Semiconductors

Structures and Magnetic Properties of (mn, N)-codoped ZnO Thin Films

First-Prinicples Study of Mn-N Co-Doped P-Type Zno

Structure, Optical, and Magnetic Properties of Sputtered Manganese and Nitrogen-Codoped ZnO Films

The Effects of Group-I Elements Co-Doping with Mn in ZnO Dilute Magnetic Semiconductor

Electronic Structure and Magnetism of Mn-Doped ZnO Nanowires

Influences of the Type of Dopant and Substrate on Ferromagnetism in ZnO:Mn

Magnetism and Energetics Ofmn-Dopedzno(10

N-Doped Zno Thin Films and Nanowires: Energetics, Impurity Distribution and Magnetism