Abstract:Carbon impurities are usually unintentionally doped in N-doped ZnO when attempting to realize p-type conductivity by metal-organic chemical vapor deposition. Mn–N co-doping technique, which is developed to realize hole-mediated room temperature ferromagnetism in ZnO, may further enhance the carbon incorporation. In this work, two kinds of Mn–N co-doped samples, grown at low temperature (400°C) and high temperature (600°C), respectively, have been compared to study the influences of carbon impurities. In contrast to that found on N mono-doped ZnO, an enhanced incorporation of carbon impurities is observed in the high-temperature-grown Mn–N co-doped sample with the conductivity changed from p to n type. According to X-ray photoelectron spectroscopy measurement, the compensation effect from carbon impurities is applied to elucidate the origin of the conductivity transition. Correspondingly, superconducting quantum interference device measurement certainly shows a much smaller value of the saturation magnetization for the high-temperature-grown sample. A possible effect from carbon related complexes on magnetization is also proposed to explain the decrease of the magnetic moment from the view of weakened spin polarization induced by unintentionally incorporated carbon. This assumption is further supported by the first-principle calculation on the Mn–N co-doped ZnO system with carbon incorporation.

Temperature-dependent Magnetization in (mn, N)-codoped ZnO-based Diluted Magnetic Semiconductors

Characterization of ZnO:Co particles prepared by hydrothermal method for room temperature magnetism

Effects of temperature on the ferromagnetism of Mn-doped ZnO nanoparticles and Mn-related Raman vibration

High-temperature Solid State Synthesis and Characterization in Magnetic and Transporting Properties of Zn_xFe_(3-x)O_4 Powder

Experimental and Theoretical Studies on the Influence of Unintentionally Doped Carbon on Magnetic Properties in ZnMnO:N

Ferromagnetic and Optical Behaviors Observed in Mn-Doped Zno-Based Thin Films

Influence of the Oxidative Annealing Temperature on the Magnetism of (mn, N)-Codoped Zno Thin Films

Structures and Magnetic Properties of (mn, N)-codoped ZnO Thin Films

Influences of unintentionally doped carbon on magnetic properties in Mn–N co-doped ZnO

Activation of Room-Temperature Ferromagnetism in Mn Doped Zno Thin Films by N Codoping

Growth Temperature Dependent Evolutions of Microstructural, Optical and Magnetic Properties of Zn0.75Co0.25O Films

The Effects of Group-I Elements Co-Doping with Mn in ZnO Dilute Magnetic Semiconductor

Mn Incorporation Induced Changes On Structure And Properties Of N-Doped Zno

Element-Specific Electronic Structure of Mn Dopants and Ferromagnetism of (zn,mn)o Thin Films

Room-temperature ferromagnetism in p-type (Mn, N)-codoped ZnO thin films achieved by thermal oxidation of sputtered Zn<sub>3</sub>N<sub>2</sub>:Mn films

Experimental And Theoretical Investigations On Ferromagnetic Nature Of Mn-Doped Dilute Magnetic Semiconductors

Room-Temperature Ferromagnetic Znmno Thin Films Synthesized by Plasma Enhanced Chemical Vapour Deposition Method

Magnetic and Transport Properties of (mn, Co)-Codoped Zno Films Prepared by Radio-Frequency Magnetron Cosputtering

Influences of the Type of Dopant and Substrate on Ferromagnetism in ZnO:Mn

Two magnetic regimes in doped ZnO corresponding to a dilute magnetic semiconductor and a dilute magnetic insulator

Magnetism and Energetics Ofmn-Dopedzno(10