Abstract:Wurtzite p-type GaN epilayer, which has a thickness of 0.5μm, is prepared by MOCVD on GaN buffer with sapphire substrate. Magnetic doping of the p-type GaN epilayer is achieved by 180keV Mn+ ions implantation. The GaN films are all implanted with dose of 5×1015cm−2, while are kept at different temperatures during the implantation, i.e. room temperature, 300 and 500°C, respectively. After an annealing step at 850°C for 30s in flowing N2, the magnetism of the Mn+-implanted p-GaN films is investigated by superconducting quantum interference device (SQUID). In the sample implanted at room temperature the magnetism is weak and no ferromagnetism is found. In the 300°C implanted p-GaN film ferromagnetism is found with obvious hysteresis loop. Further increase in the implantation temperature to 500°C brings about no increase in ferromagnetism. Combined with the structural characteristics of the Mn+-implanted p-GaN films studied by X-ray diffraction (XRD), one concludes that only suitable increase of the implantation temperature could be beneficial to the recovery of implantation defects and the generation of ferromagnetism in the Mn+-implanted p-GaN films.

Research on the Mn-implanted GaN with Ferromagnetism at Room Temperature

Optical and Structural Properties of Mn-Implanted GaN Films

Preparation and Characterization of Room-Temperature Ferromagnetism GaMnN Based on Ion Implantation

Optical Characteristics and Magnetism of Mn+-Ion-Implanted MOCVD-GaN Film

Accurate Characterization of Room-Temperature Long Range Magnetic Order in GaN: Mn by Magnetic Force Microscope

Room Temperature Ferromagnetism of Gan : Mn Thin Films Grown by Low Pressure Metal-Organic Chemical Vapor Deposition by Mn Periodic Delta-Doping

Ferromagnetic Properties And Structures Of The Mn-Implanted Gaas Semiconductor

Room-Temperature Ferromagnetism of Ga 1− X Mn X N Grown by Low-Pressure Metalorganic Chemical Vapour Deposition

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Studies on Structural and Magnetic Properties in Mn-Doped GaN

Structural And Magnetic Properties In Mn-Doped Gan Grown By Metal Organic Chemical Vapor Deposition

The influence of implantation temperature on the magnetism and structure of Mn+ implanted p-GaN films

Room-Temperature Ferromagnetism in N+-Implanted Zno:Mn Thin Films

Room Temperature Ferromagnetism in Mn-doped Γ-Ga2o3 with Spinel Structure

Ga-vacancy Induced Room Temperature Ferromagnetism Observed in N-irradiated GaN Films

Nitrogen Vacancy Effects on the Ferromagnetism of Mn Doped GaN Films

Confirmation of room-temperature long range magnetic order in GaN:Mn

Nano-clusters structure and magnetic properties of high fluence Mn+ ion-implanted GaN

Magnetism in Mn delta-doped cubic GaN: density-functional theory studies

Intrinsic mechanism for high temperature ferromagnetism in GaMnN

Ferromagnetism of Mn-doped GaN polycrystalline powders