Abstract:The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic applications of (Ga,Mn)As, or other dilute magnetic semiconductors, remains their below room-temperature ferromagnetic transition temperature. Enhancing ferromagnetism in semiconductors requires understanding the mechanisms for interaction between magnetic dopants, such as Mn, and identifying the circumstances in which ferromagnetic interactions are maximized [5]. Here we report the use of a novel atom-by-atom substitution technique with the scanning tunnelling microscope (STM) to perform the first controlled atomic scale study of the interactions between isolated Mn acceptors mediated by the electronic states of GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-xMnxAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. Our experimental methods also provide a realistic approach to create precise arrangements of single spins as coupled quantum bits for memory or information processing purposes.

Ferromagnetic Properties And Structures Of The Mn-Implanted Gaas Semiconductor

Ferromagnetic properties and structure of MnPLU ion-implanted GaAs

Preparation and Characterization of Room-Temperature Ferromagnetism GaMnN Based on Ion Implantation

Structural and magnetic characteristics of MnAs nanoclusters embedded in Be-doped GaAs

Nano-clusters structure and magnetic properties of high fluence Mn+ ion-implanted GaN

Modulating Above-Room-temperature Magnetism in Ga-implanted Fe5GeTe2 Van Der Waals Magnets

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

Research on the Mn-implanted GaN with Ferromagnetism at Room Temperature

Magnetic Properties of Mn-Implanted N-Type Ge

Magnetic and structural properties of Fe-implanted GaN at room temperature

Ferromagnetic (in,ga,mn)as Films Prepared by Ion Implantation and Pulsed Laser Melting

GROWTH AND CHARACTERIZATION OF Be-CODOPED GaMnAs

Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

Microstructure and Ferromagnetism of Heavily Mn Doped SiGe Thin Flims

Ferromagnetic Mn-Implanted GaP: Microstructures vs Magnetic Properties

Structural And Magnetic Properties In Mn-Doped Gan Grown By Metal Organic Chemical Vapor Deposition

Crystalline and transport characteristics of ferrimagnetic and antiferromagnetic phases in Mn3Ga films

The influence of implantation temperature on the magnetism and structure of Mn+ implanted p-GaN films

Spatially controlled formation of superparamagnetic (Mn,Ga)As nanocrystals in high temperature annealed (Ga,Mn)As/GaAs superlattices

Magnetic and Optical Properties of Cr+-Implanted Gan

Structure Dependence of Magnetic Properties for Annealed GaMnN Films Grown by MOCVD