Optical and Magnetic Properties of Fe-Doped GaN Diluted Magnetic Semiconductors Prepared by MOCVD Method

Tao Zhi-Kuo,Zhang Rong,Cui Xu-Gao,Xiu Xiang-Qian,Zhang Guo-Yu,Xie Zi-Li,Gu Shu-Lin,Shi Yi,Zheng You-Dou
DOI: https://doi.org/10.1088/0256-307x/25/4/084
2008-01-01
Abstract:Fe-doped GaN thin films are grown on c-sapphires by metal organic chemical vapour deposition method (MOCVD). Crystalline quality and phase purity are characterized by x-ray diffraction and Raman scattering measurements. There are no detectable second phases formed during growth and no significant degradation in crystalline quality as Fe ions are doped. Fe-related optical transitions are observed in photoluminescence spectra. Magnetic measurements reveal that the films show room-temperature ferromagnetic behaviour. The ferromagnetism may originate from carrier-mediated Fe-doped GaN diluted magnetic semiconductors or nanoscale iron clusters and Fe-N compounds which we have not detected.
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