Abstract:In this work, the performance of AlGaN/ gallium nitride (GaN) high-electron mobility transistors (HEMTs) with different Fe doping tails was systematically investigated and compared. It is illustrated that the combination of the unintentionally doped (UID) GaN layer and a thinner Fe doping buffer layer would result in a faster slope rate of Fe concentration in the UID GaN layer. The devices with the fastest slope rate of Fe concentration in the UID GaN layer exhibited excellent large signal performance, including the saturated power density (${P}_{sat}$ ) of 9 W/mm and the power-added efficiency (PAE) of 65.6%. In addition, the ${P}_{sat}$ and the PAE of the device with the fastest slope rate of Fe concentration in UID GaN layer are 27.7% and 14.7%, which are higher than that of the device with the slowest slope rate of Fe concentration under the class AB operation conditions. Pulse ${I}$ ,–${V}$ measurement results demonstrated that the buffer-related current collapse was more effectively suppressed in the 0.5-$\mu \text{m}$ Fe doping buffer layer because of faster slope rate of Fe concentration in UID GaN layer. Moreover, the frequency-dependent capacitance and conductance measurement results indicated that the current collapse was relevant to deep traps in the UID GaN layer introduced by Fe doping. By reducing the concentration of the deep traps caused by Fe doping, the device showed excellent characteristics of dc and RF. Furthermore, controlling the Fe doping tail was important for designing the GaN-based power amplifier with high ${P}_{sat}$ and PAE.

Effects of Fe Doping on the Strain and Optical Properties of GaN Epilayers Grown on Sapphire Substrates

Strain Status in Fe- and Si- Doped GaN Epilayers Grown on Sapphire

Effect of Fe-doping on Nonlinear Optical Responses and Carrier Trapping Dynamics in GaN Single Crystals

Optical and Magnetic Properties of Fe-Doped GaN Diluted Magnetic Semiconductors Prepared by MOCVD Method

The effect of biaxial tensile strain on structure and photoelectric properties of Fe-doped GaN monolayer

Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition

Fe-Doped Inn Layers Grown by Molecular Beam Epitaxy

Paramagnetic GaN:Fe and ferromagnetic (Ga,Fe)N - relation between structural, electronic, and magnetic properties

The Effects of Nonmetal Dopants on the Electronic, Optical and Chemical Performances of Monolayer G–c3n4 by First-Principles Study

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

The Fe-Mg interplay and the effect of deposition mode in (Ga,Fe)N doped with Mg

Strain Effect of Multilayer FeN Structure on GaAs Substrate

The Effects of Sapphire Nitridation on GaN Growth by Metalorganic Chemical Vapour Deposition

Effects of Indium Surfactant on the Crystalline and Optical Properties of GaN During Initial Growth Stage

Influence of Doping on Fe3+ Sensitive Films of Ge-Sb-Se-Fe(Ni)

Effect of Ni, Fe-Doping on the Structure and Properties of Ge-Sb-Se Thin Films

Electronic and magnetic properties of Fe-doped GaN: first-principle calculations

Ultrafast Nonlinearity and Broadband Photodynamics in Fe-Doped GaN Crystals

The Influence of Fe Doping Tail in Unintentionally Doped GaN Layer on DC and RF Performance of AlGaN/GaN HEMTs

Infrared Reflectance Investigation of Undoped and Si-Doped GaN Films on Sapphire

Effects of Strain and Mg-Dopant on the Photoluminescence Spectra in P-Type Gan