Strain Status in Fe- and Si- Doped GaN Epilayers Grown on Sapphire

C. C. Zheng,J. Q. Ning,J. F. Wang,K. Xu,D. G. Zhao,S. J. Xu

DOI: https://doi.org/10.1364/oedi.2015.jw3a.47

2015-01-01

Abstract:The effect of Fe doping on a series of Fe-doped GaN epilayers with difference doping concentrations were studied by Raman spectroscopy with comparison to Si-doped GaN samples. Compressive strain in Fe-dope GaN tend to relax.

What problem does this paper attempt to address?

Effects of Fe Doping on the Strain and Optical Properties of GaN Epilayers Grown on Sapphire Substrates

C. C. Zheng,J. Q. Ning,Z. P. Wu,J. F. Wang,D. G. Zhao,K. Xu,J. Gao,S. J. Xu

DOI: https://doi.org/10.1039/c4ra12218f

IF: 4.036

2014-01-01

RSC Advances

Abstract:The effects of Fe doping on a series of Fe-doped GaN epilayers with different doping concentrations grown on sapphire substrates were investigated in detail by confocal micro-Raman spectroscopy under the back-scattering geometric configuration.
The effect of biaxial tensile strain on structure and photoelectric properties of Fe-doped GaN monolayer

Juan Song,Zhao Ding,Xue-Fei Liu,Ze-Chen Huang,Jia-Wei Li,Jie-Min Wei,Zi-Jiang Luo,Ji-Hong Wang,Xiang Guo

DOI: https://doi.org/10.1016/j.commatsci.2021.110644

IF: 3.572

2021-09-01

Computational Materials Science

Abstract:<p>Under a biaxial tensile strain of 0% to 5%, the formation energy, band structure, dielectric function, absorption coefficient, reflectivity coefficient and loss function of Fe-doped two-dimensional (2D) GaN are systematically calculated based on the density functional theory, and the mechanism of bandgap variation is analyzed in detail. It is found that the bond lengths of Fe-N and Ga-N increase linearly and the bandgap changes quadratically with the increase of biaxial tensile strain. The results demonstrate that the 2D GaN: Fe is a direct bandgap semiconductor and its bandgap type would not be affected by biaxial tensile strain. The static dielectric constant of unstrained 2D GaN: Fe is 28.6, with the increase of biaxial tensile strain, the dielectric constant of 2D GaN: Fe increases, resulting in the charge storage capacity of 2D GaN: Fe enhancing and the parasitic capacitance increasing, the peak values of the absorption coefficient, refractive index and loss function increase with increasing strain, these results indicate that the biaxial tensile strain can seriously affect the optical properties of 2D GaN: Fe.</p>

materials science, multidisciplinary
The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Jianjun Tang,Ting Liang,Weili Shi,Qianqian Zhang,Yong Wang,Jun Liu,Jijun Xiong

DOI: https://doi.org/10.1016/j.apsusc.2011.04.082

IF: 6.7

2011-01-01

Applied Surface Science

Abstract:In this paper the stress-sensitive features of hexagonal-GaN (H-GaN) and cubic-Si (C-Si) were investigeted. The H-GaN films have been grown on Si (1 1 1) substrates by metal-organic chemical vapor deposition (MOCVD). The Raman peaks of GaN E-2 (high) and Si (TO) have a blueshift when applying displacement-loadings which parallel the (0 0 0 2) plane of H-GaN. According to the relationship between stress changing and Raman peak shifts, the values of compressive stress in both materials were larger with increasing the displacement-loadings. The stress-sensitivity of H-GaN up to 93.5 MPa/mu m which higher than C-Si which testing is 467.9 MPa/mu m and the nonlinear error sigma of GaN films is 0.1639 and Si is 0.0698. The measurement has a great significance to deeply research the piezoelectric polarization of H-GaN in future. This finding is important for the understanding and application of nitride semiconductors. (C) 2011 Elsevier B. V. All rights reserved.
Stress and Its Effect on Optical Properties of GaN Epilayers Grown on Si(111), 6H-Sic(0001), and C-Plane Sapphire

DG Zhao,SJ Xu,MH Xie,SY Tong,H Yang

DOI: https://doi.org/10.1063/1.1592306

IF: 4

2003-01-01

Applied Physics Letters

Abstract:The stress states in unintentionally doped GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire, and their effects on optical properties of GaN films were investigated by means of room-temperature confocal micro-Raman scattering and photoluminescence techniques. Relatively large tensile stress exists in GaN epilayers grown on Si and 6H-SiC while a small compressive stress appears in the film grown on sapphire. The latter indicates effective strain relaxation in the GaN buffer layer inserted in the GaN/sapphire sample, while the 50-nm-thick AlN buffer adopted in the GaN/Si sample remains highly strained. The analysis shows that the thermal mismatch between the epilayers and the substrates plays a major role in determining the residual strain in the films. Finally, a linear coefficient of 21.1+/-3.2 meV/GPa characterizing the relationship between the luminescent bandgap and the biaxial stress of the GaN films is obtained. (C) 2003 American Institute of Physics.
Strain Effect of Multilayer FeN Structure on GaAs Substrate

Xiaowei Zhang,Nian Ji,Valeria Lauter,Hailemariam Ambaye,Jian-Ping Wang

DOI: https://doi.org/10.1063/1.4800086

IF: 2.877

2013-01-01

Journal of Applied Physics

Abstract:Overly doped FeN multilayer structure on GaAs substrate was fabricated. After the post-annealing process, FeN martensite in each Fe/FeN layer formed partially chemically ordered Fe16N2, which was observed by X-ray diffraction. To detect the saturation magnetization (Ms) depth profile, polarized neutron reflectivity was conducted. Fe/FeN layer showed a significant improvement of Ms for each layer compared to Ms of Fe. More importantly, different FeN layers showed different Ms according to the physical distance to the substrate GaAs. The most enhanced Ms (exceeding the limit of Fe65Co35 Ms) observed at the bottom part of the film, consistent with previous reports, should be attributed to the lattice strain by GaAs substrate. In order to detect the lattice constant, In-plane X-ray Diffraction was done and a large in-plane lattice constant was determined.
Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Y. Feng,V. Saravade,T.F. Chung,Y. Dong,H. Zhou,B. Kucukgok,I. T. Ferguson,N. Lu

DOI: https://doi.org/10.1038/s41598-019-46628-4

2019-05-10

Abstract:This work presents a systematic study of stress and strain of AlxGa1-xN/AlN with composition ranging from GaN to AlN, grown on a c-plane sapphire by metal-organic chemical vapor deposition, using synchrotron radiation high-resolution X-ray diffraction and reciprocal space mapping. The c-plane of the AlxGa1-xN epitaxial layers exhibits compressive strain, while the a-plane exhibits tensile strain. The biaxial stress and strain are found to increase with increasing Al composition, although the lattice mismatch between the AlxGa1-xN and the buffer layer AlN gets smaller. A reduction in the lateral coherence lengths and an increase in the edge and screw dislocations are seen as the AlxGa1-xN composition is varied from GaN to AlN, exhibiting a clear dependence of the crystal properties of AlxGa1-xN on the Al content. The bandgap of the epitaxial layers is slightly lower than predicted value due to a larger tensile strain effect on the a-axis compared to the compressive strain on the c-axis. Raman characteristics of the AlxGa1-xN samples exhibit a shift in the phonon peaks with the Al composition. The effect of strain is also discussed on the optical phonon energies of the epitaxial layers. The techniques discussed here can be used to study other similar materials.

Materials Science,Optics
Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Ting Liang,Jianjun Tang,Jijun Xiong,Yong Wang,Chenyang Xue,Xujun Yang,Wendong Zhang

DOI: https://doi.org/10.1016/j.vacuum.2010.01.054

2011-01-01

Abstract:Hexagonal-GaN heteroepitaxy layers have been grown on Si(111)substrate by MOCVD.The structure,morphology and optical properties of GaN epilayer is analyzed and characterized by various analysis method such as optical microscope,AFM,SEM,X-ray diffraction(XRD),and Raman spectra,etc.Test results show that the crystal reveals the wurtzite structure with the(0002)crystal orientation and the heteroepitaxial growth of GaN has good single crystal quality,good directing property,smooth surface without crack.The Raman peaks of E2(high)and A1(LO)phonon mode have red shift according to relaxed GaN,which might be related to the tensile stress in GaN layer.But the AO phonon mode of Si have blue shift as its eigen frequency which shows the Si substrate suffered compressive stress.
Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

d j chen,bing shen,k x zhang,y q tao,x s wu,jingjuan xu,rui zhang,y d zheng

2004-01-01

Abstract:The temperature dependence of strain in a 50-nm- and an 100-nm-thick Al0.2Ga0.8N/GaN heterostructures were investigated at temperatures 300-800K. The results show that the temperature behavior of the in-plane strain in the 50-nm-thick AlGaN layer is different to that in the 100-nm-thick AlGaN layer. There exists an initial energy barrier to the strain relaxation for the 50-nm-thick Al0.22Ga0.7N/GaN heterostructure. Meanwhile, for both the 50-nm-and 100-nm-thick AlGaN layers the strain relaxation becomes saturated at the high temperature segment, although the temperature at the point of saturation is different. The total strain relaxation is less than 5% for both the 50-nm- and 100-nm-thick Al0.22Ga0.78N layers at whole temperature range in our measurements.
Can Interference Patterns in the Reflectance Spectra of Gan Epilayers Give Important Information of Carrier Concentration?

C. C. Zheng,S. J. Xu,F. Zhang,J. Q. Ning,D. G. Zhao,H. Yang,C. M. Che

DOI: https://doi.org/10.1063/1.4766188

IF: 4

2012-01-01

Applied Physics Letters

Abstract:Low-temperature reflectance spectra of a series of Si-doped GaN epilayers with different doping concentrations grown on sapphire by metal-organic chemical vapour deposition were measured. In addition to the excitonic polariton resonance structures at the band edge, interference oscillating patterns were observed in the energy region well below the band gap. The amplitudes of these oscillation patterns show a distinct dependence on the doping concentrations of the samples. From the thin-film optical interference principle, an approach connecting the amplitude of the interference oscillations and the impurity scattering was established. Good agreement between experiment and theory is achieved.
Strain study of partially relaxed Ge epilayers on Si (100) substrate

Chengwen Pei,Jie Qin,Xiaohan Liu,DongZhi Hu,Xiangjiu Zhang,Daming Huang,Zuimin Jiang,Quanjie Jia,Wenli Zheng,Zhouguang Wang,Jun Wang,Xiaoming Jiang

1999-01-01

Abstract:Ge epilayers of different thicknesses are grown by molecular beam epitaxy with Sb as a surfactant on Si (100) substrate. X-ray diffractions illustrate that these Ge thin films are partially strained, and strain decreases gradually with increasing thickness. Raman spectra reveal a peak downward shift of Ge-Ge mode with increasing thickness of epilayers. In region of high strain, the relationship between Raman shift of this mode and the strain in the partially relaxed samples is great different from the linear relationship reported before, the possible reasons are discussed.
Strain effects on electronic structure and optics of al-Doped monolayer GaS

Xiaotong Yang,Guili Liu,Ran Wei,Guoying Zhang

DOI: https://doi.org/10.1080/00268976.2024.2421391

2024-10-30

Molecular Physics

Abstract:This comprehensive study utilises rigorous first-principles calculations to meticulously investigate the influence of uniaxial tensile strain on the electronic configuration and optical behaviours of aluminium-doped gallium sulphide. The study highlights the modulation of electrical properties and optical responses in Al-doped monolayer GaS through the application of tensile strain. Notably, with increasing tensile strain, the bandgap value of the pristine GaS exhibits a pronounced decline, whereas the Al-doped variant maintains a more stable bandgap. A deeper exploration of the state density reveals the emergence of novel electronic states and energy levels in both the pristine and Al-doped monolayer GaS systems as tensile strain is applied. Crucially, the stabilising effect of the doped Al atoms minimises variations in the state density profiles of the Al-doped monolayer GaS systems, in contrast to their pristine counterparts. This result implies that fine control of the electrical structure and optical characteristics of Al-doped monolayer GaS may be achieved by the application of uniaxial tensile strain. The optoelectronic characteristics of GaS and its doped systems are explained in detail by these discoveries, which also offer a crucial theoretical foundation and direction for the use of these materials in optoelectronic devices.

chemistry, physical,physics, atomic, molecular & chemical
Silicon Doping Dependence of n-Type Al0.5Ga0.5 N Layers Grown by Metalorganic Chemical Vapor Deposition.

L LIANG,Z RONG,X ZILI,Z YU,X XIANGQIAN,L BIN,Z JIANJUN,C LIN,Y HUIQIANG,H PING

DOI: https://doi.org/10.1016/S1002-0721(07)60502-X

IF: 4.632

2008-01-01

Journal of Rare Earths

Abstract:The electrical, structure and optical properties of Si-doped Al0.5Ga0.5N epilayers with a thickness of about 0.5 μ grown on sapphire substrates using an AIN buffer by metalorganic chemical vapor deposition were reported. Hall-effect measurements showed that n-type Al0.5Ga0.5N was achieved achieved with an electron concentration of 1.2 × 1019 cm−3 and mobility of 12 cm2·Vs−1 at room temperature. The electron concentration increases with an increase of Si doping level. Lattice constant of c and Raman shift of Si-doped Al0.5Ga0.5N epilayers with various SiH4 flow rates was studied by X-ray diffraction (XRD) and Raman scattering spectrum. With increasing SiH4 flow rate, the decrease of the lattice constant of c and the frequency of E2 phonon implies gradual relaxation of the stress in the epilayers.
Strain Effects on InxAl1−xN Crystalline Quality Grown on GaN Templates by Metalorganic Chemical Vapor Deposition

Z. L. Miao,T. J. Yu,F. J. Xu,J. Song,L. Lu,C. C. Huang,Z. J. Yang,X. Q. Wang,G. Y. Zhang,X. P. Zhang,D. P. Yu,B. Shen

DOI: https://doi.org/10.1063/1.3305397

IF: 2.877

2010-01-01

Journal of Applied Physics

Abstract:In x Al 1 − x N epilayers (∼200 nm thick) under different strain states were grown on GaN templates by metalorganic chemical vapor deposition. When the strain is small (0.166≤x≤0.208), InxAl1−xN epilayers are almost fully coherent with the GaN templates, and the surface presents similar characteristic of small hillocks and uniform pits. In the case of large tensile strain, cracks emerged on the surface, but the surface morphology is less influenced compared to the samples with small strain. However, with large compressive strain, the surface roughness dramatically increased and additional smaller pits emerged with partial strain relaxation occurring during growth. In addition, the microstructures were further investigated by transmission electron microscopy. It is demonstrated that even slight relaxation of compressive strain can lead to notable influence on the structural quality and surface morphology of InxAl1−xN films.
Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering

A Sarua,Hangfeng Ji,J W Pomeroy,M J Uren,T Martin,M Kuball

DOI: https://doi.org/10.1088/0268-1242/25/8/085004

IF: 2.048

2010-07-14

Semiconductor Science and Technology

Abstract:Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors (HFETs), i.e. the strain induced by applying bias to a transistor, was studied using micro-Raman scattering spectroscopy as a function of applied source–drain voltage for different GaN buffer doping levels and substrate types. By monitoring the phonon frequency shifts and line width of the E2 and A1(LO) phonon modes of GaN, a considerable piezoelectric strain/stress was found in undoped devices, which exhibited a saturation above 40 V bias. This saturation voltage was used to quantify the deep acceptor concentration in the GaN buffer layer. Using experimental Raman data and numerical modelling of the electric field distribution in the device, it was furthermore established that Fe doping causes confinement of the strain/stress to the vicinity of the AlGaN/GaN interface, i.e. near the electron channel, with potential implications for device reliability. It was concluded that varying the structure and doping in the buffer layer has the potential to modify the converse piezoelectric strain and hence affect reliability issues in AlGaN/GaN HFETs.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Effects of Al Doping on Dislocation Inclinations and Strain of GaN Films on Si Substrates

Jie Zhang,Xuelin Yang,Hongping Ma,Qingchun Zhang,Bo Shen

DOI: https://doi.org/10.1063/5.0126796

IF: 1.697

2023-01-01

AIP Advances

Abstract:We present how the interaction between Al dopants and threading dislocations affects dislocation inclinations and then plays an important role in controlling residual strain in GaN-on-Si epitaxial films. When the Al concentration in the GaN epitaxial film is increased to 0.85%, the dislocations extend almost in the growth direction, contributing to a strain-free epitaxial film. We suggest that the Al atoms could substitute for Ga vacancies at the dislocation cores on the growth surface and then inhibit the dislocation inclinations. The suppressed dislocation inclinations lead to a reduced relaxation of compressive strain. The results pave a new way to control dislocation movements and strain in GaN epitaxial films on Si substrates.
Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

ZM Jiang,CW Pei,XF Zhou,WR Jiang,B Shi,XH Liu,X Wang,QJ Jia,WL Zheng,XM Jiang

DOI: https://doi.org/10.1063/1.124378

IF: 4

1999-01-01

Applied Physics Letters

Abstract:Ge epilayers of different thicknesses are grown by molecular-beam epitaxy with Sb as a surfactant on Si(100) substrates. X-ray diffraction illustrates that these Ge thin films are partially strained, and the strains decrease gradually with increasing epilayer thickness. Raman spectra reveal a downward shift of the Ge–Ge mode peak as the epilayer thickness increases. In the regions of high strain, the relationship between the Raman shift of this mode and the strain in the partially relaxed samples is considerably different from the linear relationship reported before, which is mainly attributed to the spatial confinement effect of phonons in a nanocrystal.
Study of residual stress in reactively sputtered epitaxial Si-doped GaN films

Mohammad Monish,S.S. Major

DOI: https://doi.org/10.1016/j.mssp.2022.106902

IF: 4.1

2022-11-01

Materials Science in Semiconductor Processing

Abstract:Si-doped GaN films were grown epitaxially on c-sapphire by rf magnetron reactive co-sputtering of GaAs and Si at various partial pressures of N2 in Ar–N2 growth atmosphere. Energy dispersive x-ray spectroscopy revealed ∼2 at.% Si in all the films, but the N/Ga ratio decreased substantially as N2 percentage was reduced from 100% to 10%. The lattice parameters (a and c) were obtained independently to determine the in-plane and out-of-plane components of strain in films, which were analyzed to deduce the hydrostatic and biaxial strain contributions. High resolution x-ray diffraction revealed the dominant presence of edge dislocations (∼1012 cm−2) in the films grown at 30%–100% N2, which decreases and becomes comparable to the density of screw dislocations (∼1011 cm−2) at lower N2 percentages. The films grown at 75%–100% N2 displayed compressive biaxial stress along with large hydrostatic strain and micro-strain due to the incorporation of nitrogen at interstitial locations and grain boundaries. Both hydrostatic strain and micro-strain decrease in the films grown below 75% N2, in which, a reversal of biaxial stress to tensile is seen due to the prevalence of in-plane tensile stress generated during coalescence. The decrease of tensile stress in films grown below 30% N2, accompanied by increase in micro-strain and hydrostatic strain are ascribed to Ar incorporation and voided morphology. The presence of Si does not have a significant influence on residual stress of films and appears to be masked by the dominant growth-related intrinsic effects.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Strain Release in GaN Epitaxy on 4 degrees Off-Axis 4H-SiC

Sirui Feng,Zheyang Zheng,Yan Cheng,Yat Hon Ng,Wenjie Song,Tao Chen,Li Zhang,Kai Liu,Kai Cheng,Kevin J Chen

DOI: https://doi.org/10.1002/adma.202201169

IF: 29.4

2022-01-01

Advanced Materials

Abstract:A hybrid field-effect transistor (HyFET), superior for power electronic applications, can be created by harnessing the merits of two representative wide-bandgap semiconductors, gallium nitride (GaN) and silicon carbide (SiC). Yet, the incompactness in the epitaxy techniques hinders the development of the HyFET-GaN is usually grown on on-axis foreign substrates including SiC, whereas SiC homoepitaxy prefers off-axis substrates. This work presents a GaN-based heterostructure epitaxially grown on a conventional 4 degrees off-axis 4H-SiC substrate, which manifests its high quality and suitability for constructing GaN-based high-electron-mobility transistors, thereby suggesting a practical approach to realizing HyFETs. In the meanwhile, a distinct two-step biaxial strain-relaxation process is proposed and studied with comprehensive characterizations.
Demonstration of Epitaxial Growth of Strain-Relaxed GaN Films on Graphene/sic Substrates for Long Wavelength Light-Emitting Diodes

Ye Yu,Tao Wang,Xiufang Chen,Lidong Zhang,Yang Wang,Yunfei Niu,Jiaqi Yu,Haotian Ma,Xiaomeng Li,Fang Liu,Gaoqiang Deng,Zhifeng Shi,Baolin Zhang,Xinqiang Wang,Yuantao Zhang

DOI: https://doi.org/10.1038/s41377-021-00560-3

2021-01-01

Light Science & Applications

Abstract:Strain modulation is crucial for heteroepitaxy such as GaN on foreign substrates. Here, the epitaxy of strain-relaxed GaN films on graphene/SiC substrates by metal-organic chemical vapor deposition is demonstrated. Graphene was directly prepared on SiC substrates by thermal decomposition. Its pre-treatment with nitrogen-plasma can introduce C–N dangling bonds, which provides nucleation sites for subsequent epitaxial growth. The scanning transmission electron microscopy measurements confirm that part of graphene surface was etched by nitrogen-plasma. We study the growth behavior on different areas of graphene surface after pre-treatment, and propose a growth model to explain the epitaxial growth mechanism of GaN films on graphene. Significantly, graphene is found to be effective to reduce the biaxial stress in GaN films and the strain relaxation improves indium-atom incorporation in InGaN/GaN multiple quantum wells (MQWs) active region, which results in the obvious red-shift of light-emitting wavelength of InGaN/GaN MQWs. This work opens up a new way for the fabrication of GaN-based long wavelength light-emitting diodes.
Influence of Si Doping on Optical Characteristics of Cubic Gan Grown on (001) Gaas Substrates

Zq Li,H Chen,Hf Liu,L Wan,Mh Zhang,Q Huang,Jm Zhou,N Yang,K Tao,Yj Han,Y Luo

DOI: https://doi.org/10.1063/1.126774

IF: 4

2000-01-01

Applied Physics Letters

Abstract:The photoluminescence (PL) properties of Si-doped cubic GaN with different carrier concentrations were investigated at room temperature. The epilayers were grown on GaAs (001) by radio-frequency molecular-beam epitaxy. It was found that when the carrier concentration is increased from 5×1015 to 2×1018 cm−3, the PL peak shifted towards low energy, from 3.246 to 3.227 eV, and the PL linewidth increased from 77.1 to 121 meV. The PL peak shift is explained by the band gap narrowing effect due to the high doping concentration. The PL linewidth includes two parts: one is doping concentration independent, which is caused by the imperfection of samples and phonon scattering; the other is doping concentration dependent. We assign the second part to the broadening by the microscopic fluctuation of the doping concentration. The experimental measurements are in good agreement with the model.

Strain Status in Fe- and Si- Doped GaN Epilayers Grown on Sapphire

Effects of Fe Doping on the Strain and Optical Properties of GaN Epilayers Grown on Sapphire Substrates

The effect of biaxial tensile strain on structure and photoelectric properties of Fe-doped GaN monolayer

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Stress and Its Effect on Optical Properties of GaN Epilayers Grown on Si(111), 6H-Sic(0001), and C-Plane Sapphire

Strain Effect of Multilayer FeN Structure on GaAs Substrate

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Can Interference Patterns in the Reflectance Spectra of Gan Epilayers Give Important Information of Carrier Concentration?

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Strain effects on electronic structure and optics of al-Doped monolayer GaS

Silicon Doping Dependence of n-Type Al0.5Ga0.5 N Layers Grown by Metalorganic Chemical Vapor Deposition.

Strain Effects on InxAl1−xN Crystalline Quality Grown on GaN Templates by Metalorganic Chemical Vapor Deposition

Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering

Effects of Al Doping on Dislocation Inclinations and Strain of GaN Films on Si Substrates

Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

Study of residual stress in reactively sputtered epitaxial Si-doped GaN films

Strain Release in GaN Epitaxy on 4 degrees Off-Axis 4H-SiC

Demonstration of Epitaxial Growth of Strain-Relaxed GaN Films on Graphene/sic Substrates for Long Wavelength Light-Emitting Diodes

Influence of Si Doping on Optical Characteristics of Cubic Gan Grown on (001) Gaas Substrates