Abstract:Exploring the phonon characteristics of novel group-IV binary XC (X = Si, Ge, Sn) carbides and their polymorphs has recently gained considerable scientific/technological interest as promising alternatives to Si for high-temperature, high-power, optoelectronic, gas-sensing, and photovoltaic applications. Historically, the effects of phonons on materials were considered to be a hindrance. However, modern research has confirmed that the coupling of phonons in solids initiates excitations, causing several impacts on their thermal, dielectric, and electronic properties. These studies have motivated many scientists to design low-dimensional heterostructures and investigate their lattice dynamical properties. Proper simulation/characterization of phonons in XC materials and ultrathin epilayers has been challenging. Achieving the high crystalline quality of heteroepitaxial multilayer films on different substrates with flat surfaces, intra-wafer, and wafer-to-wafer uniformity is not only inspiring but crucial for their use as functional components to boost the performance of different nano-optoelectronic devices. Despite many efforts in growing strained zinc-blende (zb) GeC/Si (001) epifilms, no IR measurements exist to monitor the effects of surface roughness on spectral interference fringes. Here, we emphasize the importance of infrared reflectivity Rω and transmission Tω spectroscopy at near normal θi = 0 and oblique θi ≠ 0 incidence (Berreman effect) for comprehending the phonon characteristics of both undoped and doped GeC/Si (001) epilayers. Methodical simulations of Rω and Tω revealing atypical fringe contrasts in ultrathin GeC/Si are linked to the conducting transition layer and/or surface roughness. This research provided strong perspectives that the Berreman effect can complement Raman scattering spectroscopy for allowing the identification of longitudinal optical ωLO phonons, transverse optical ωTO phonons, and LO-phonon-plasmon coupled ωLPP+ modes, respectively.

Can Interference Patterns in the Reflectance Spectra of Gan Epilayers Give Important Information of Carrier Concentration?

Impurity Scattering Induced Excitonic Polariton Damping And Its Influence On The Reflectance Spectra Of Gan Epilayers

Influence of Si Doping on Optical Characteristics of Cubic Gan Grown on (001) Gaas Substrates

Strain Status in Fe- and Si- Doped GaN Epilayers Grown on Sapphire

Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films

Carrier Density Imaging of Lateral Epitaxially Overgrown Gan Using Scanning Confocal Raman Microscopy

Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Influence of Charged Dislocation on Mobility in Degenerate Homoepitaxial Si-Doped Ga 2 O 3 Films on $(\overline{2}01)\ \beta$ -Ga 2 O 3 by Laser Molecular Beam Epitaxy

Simulations of Infrared Reflectivity and Transmission Phonon Spectra for Undoped and Doped GeC/Si (001)

Optical Properties of p-Type GaAs in Far-Infrared Region

Effect of Carrier Concentration on the Reflectivity Spectrum of Ge and InSb

Effects of Fe Doping on the Strain and Optical Properties of GaN Epilayers Grown on Sapphire Substrates

Spatial Variation of Electrical Properties in Lateral Epitaxially Overgrown Gan

Silicon Doping Dependence of n-Type Al0.5Ga0.5 N Layers Grown by Metalorganic Chemical Vapor Deposition.

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers with Different Carbon Doping Concentration

Influence of Charged Dislocation on Mobility in Degenerate Homoepitaxial Si-Doped Ga<sub>2</sub>O<sub>3</sub> Films on $(\overline{2}01)\ \beta$-Ga<sub>2</sub>O<sub>3</sub> by Laser Molecular Beam Epitaxy

Carrier transport and luminescence properties of n-type GaN

Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge

RAMAN SPECTROSCOPY STUDY ON LO PHONON-PLASMON COUPLED MODE IN GaN THIN FILMS