Abstract:Exploring the phonon characteristics of novel group-IV binary XC (X = Si, Ge, Sn) carbides and their polymorphs has recently gained considerable scientific/technological interest as promising alternatives to Si for high-temperature, high-power, optoelectronic, gas-sensing, and photovoltaic applications. Historically, the effects of phonons on materials were considered to be a hindrance. However, modern research has confirmed that the coupling of phonons in solids initiates excitations, causing several impacts on their thermal, dielectric, and electronic properties. These studies have motivated many scientists to design low-dimensional heterostructures and investigate their lattice dynamical properties. Proper simulation/characterization of phonons in XC materials and ultrathin epilayers has been challenging. Achieving the high crystalline quality of heteroepitaxial multilayer films on different substrates with flat surfaces, intra-wafer, and wafer-to-wafer uniformity is not only inspiring but crucial for their use as functional components to boost the performance of different nano-optoelectronic devices. Despite many efforts in growing strained zinc-blende (zb) GeC/Si (001) epifilms, no IR measurements exist to monitor the effects of surface roughness on spectral interference fringes. Here, we emphasize the importance of infrared reflectivity Rω and transmission Tω spectroscopy at near normal θi = 0 and oblique θi ≠ 0 incidence (Berreman effect) for comprehending the phonon characteristics of both undoped and doped GeC/Si (001) epilayers. Methodical simulations of Rω and Tω revealing atypical fringe contrasts in ultrathin GeC/Si are linked to the conducting transition layer and/or surface roughness. This research provided strong perspectives that the Berreman effect can complement Raman scattering spectroscopy for allowing the identification of longitudinal optical ωLO phonons, transverse optical ωTO phonons, and LO-phonon-plasmon coupled ωLPP+ modes, respectively.

Effect of Carrier Concentration on the Reflectivity Spectrum of Ge and InSb

Study on the Carrier Concentration in N-Gaas Homojunction Multilayer Structures by Reflection Spectroscopy

Can Interference Patterns in the Reflectance Spectra of Gan Epilayers Give Important Information of Carrier Concentration?

Mobility and Phonon Scattering in Epitaxial PbSe Films

Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Distinct Ultrafast Carrier Dynamics of Α-In2se3 and Β-In2se3: Contributions from Band Filling and Bandgap Renormalization.

Carrier concentration resolved

Simulations of Infrared Reflectivity and Transmission Phonon Spectra for Undoped and Doped GeC/Si (001)

Carrier-induced Lower Energy Side Shift of the Absorption Edge in Undoped GaAs Films

The effect of pressure on the properties of germanium and silicon

Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate

Controlling n -Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature

Photo-excited Carrier Relaxation Dynamics in Two-Dimensional InSe Flakes.

Quantum Oscillations of the Topological Surface States in Low Carrier Concentration Crystals of Bi_2-xSb_xTe_3-ySe_y

Numerical analysis of carrier multiplication mechanisms in nanocrystal and bulk forms of PbSe and PbS

Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals

Effect of interdiffusion and quantum confinement on Raman spectra of the Ge/Si(100) heterostructures with quantum dots

Optical properties of InSb derived from reflection electron energy loss spectroscopy spectrum

The Characteristics Study of Photoreflectance of $\textrm{in}_{0.1}\textrm{ga}_{0.1}\textrm{as}$ Epi-layer Grwon by Molecular BEAM Epitaxy

Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures