Abstract:In this article, we present the main theoretical results, including electronic properties (band structure, total density of states (DOS), and partial density of states (PDOS)), as well as optical characteristics (dielectric function, refractive index, and absorption) for gallium arsenide (GaAs) and its ternary alloy (Ga 0.75 Al 0.25 As) in the zinc-blende (ZB) phase. The results are analyzed as a function of pressure within the range of 0, 5, 10, and 15 GPa, using the CASTEP code, which is based on density functional theory (DFT) and employs a combination of plane wave (PW) and pseudopotential (PP) techniques. The exchange-correlation potential is treated using the generalized gradient approximation (GGA-PBE), parameterized by Perdew–Burke–Ernzerhof. Our results reveal an increase in the direct band gap with pressure. We find a strong agreement between our findings and both experimental data and other theoretical studies available in the literature. We have presented the electronic band structures along with the total and partial density of states (TDOS, PDOS) for the ternary alloy (Ga 0.75 Al 0.25 As) at different pressures ranging from 0 GPa to 15 GPa in 5 GPa increments. It is observed that the real part of the dielectric function, ε 1 (0), and the refractive index, n(0), decrease with increasing pressure. Additionally, while the nature of the optical constant curves remains largely unchanged with increasing pressure, all peaks are shifted to higher energy values. These results demonstrate the impact of replacing a gallium (Ga) atom with an aluminum (Al) atom in the binary material (GaAs) at various pressure values, potentially enhancing the performance of (GaAlAs) in optoelectronic devices.

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