Electron-density distribution in diamond, silicon and germanium under high pressure

S. Massidda,A. Baldereschi
DOI: https://doi.org/10.1016/0038-1098(85)90025-0
IF: 1.934
1985-11-01
Solid State Communications
Abstract:The valence-electron densities of C, Si, and Ge under high pressure are studied with the full-potential linearized APW method. For all three materials, the forbidden x-ray structure factor F(222) is stable under pressure and varies less than 3% under volume changes as big as ± 10%. The 30% drop of F(222) recently measured in Si just before the transition to the β - Sn structure is interpreted as an effect of the coexistence of the diamond and β - Sn phases over a 10 Kbar pressure range centered at the transition pressure.
physics, condensed matter
What problem does this paper attempt to address?