Abstract:Lacunar spinels, represented by AM4X8 compounds (A = Ga or Ge; M = V, Mo, Nb, or Ta; X = S or Se), form a unique group of ternary chalcogenide compounds. Among them, GeV4S8 has garnered significant attention due to its distinctive electrical and magnetic properties. While previous research efforts have primarily focused on studying how this material behaves under cooling conditions, pressure is another factor that determines the state and characteristics of solid matter. In this study, we employed a diamond anvil cell in conjunction with high-energy synchrotron X-ray diffraction, Raman spectroscopy, four-point probes, and theoretical computation to thoroughly investigate this material. We found that the structural transformation from cubic to orthorhombic was initiated at 34 GPa and completed at 54 GPa. Through data fitting of volume vs pressure, we determined the bulk moduli to be 105 ± 4 GPa for the cubic phase and 111 ± 12 GPa for the orthorhombic phase. Concurrently, electrical resistance measurements indicated a semiconductor-to-nonmetallic conductor transition at ∼15 GPa. Moreover, we experimentally assessed the band gaps at different pressures to validate the occurrence of the electrical phase transition. We infer that the electrical phase transition correlates with the valence electrons in the V4 cluster rather than the crystal structure transformation. Furthermore, the computational results, electronic density of states, and band structure verified the experimental observation and facilitated the understanding of the mechanism governing the electrical phase transition in GeV4S8.

High-pressure Structural Behaviour of Nanocrystalline Ge

Size-Induced Enhancement of Bulk Modulus and Transition Pressure of Nanocrystalline Ge

X-ray Diffraction Study on Pressure-Induced Phase Transformation in Nanocrystalline GaAs

Unusual structure and properties of germanium under pressure

Phase Transformation in Nanocrystalline Alpha-Quartz Geo2 Up to 51.5 Gpa

Pressure-induced structural transition in CaF2 nanocrystals

Pressure-induced reversible structural phase transitions and metallization in GeTe under hydrostatic and non-hydrostatic environments up to 22.9 GPa

Structural stability in nanocrystalline ZnO

Pressure-induced evolution of structure and electronic property of GeP

Structural behavior and electrical transport properties of Mg2Ge under high pressure

Local structural investigation of non-crystalline materials at high pressure: the case of GeO2glass

Phase Transformation in Nanocrystals under Pressure

Structural and electrical properties of GeSe and GeTe at high pressure

First-principles Study of Structural, Thermodynamic, Elastic, and Magnetic Properties of Cr2GeC under Pressure and Temperature

Structural and electronic transformations of GeSe2 glass under high pressures studied by X-ray absorption spectroscopy

Structural and Elastic Properties of CaGeO3 Perovskite at High Pressures

Structural Stability in Nanocrystal ZnS

Phase Transformations in Nanocrystals

Phase transition and metallization of semiconductor GeSe at high pressure

Structural transitions of solid germane under pressure

Pressure-Induced Changes in the Crystal Structure and Electrical Conductivity of GeV 4 S 8