Abstract:In this paper, the properties of electronic structure and band-gap change of Zn2GeO4 under high pressures are investigated using the first principles method based on the density functional theory (DFT). We demonstrate that the density functional theory calculations performed with the local density approximation (LDA) allows for a significantly better reproduction of lattice constants, the unit cell volume and the band gap of Zn2GeO4 than those performed with the generalized gradient approximation (GGA), so the electronic structure and the band-gap changes of Zn2GeO4 under high pressures can be systematically investigated by LDA. Result of the state density without application of pressures shows that Zn2GeO4 is a wide direct-band-gap semiconductor, and the top of the valence band is mainly composed of Zn 3d and O 2p states, while the conduction band is dominated by the Zn-4 s and Ge 4p. Calculated results about the energy band structure of Zn2GeO4 show that the band gaps of Zn2GeO4 first increase and have a peak at around 9.7 GPa, and then gradually decrease with increasing pressure. The Mulliken charge populations and the value of net charges of Zn2GeO4 at different pressures reveal that the charge distribution of O atoms does not change obviously, while the s and p orbital charges of Zn and Ge atom distributions have obviously charge transfer above 9.7 GPa, and result in an increase of Zn and Ge atom net charges. Analysis of the state density, the Mulliken charge populations, and the electronic density difference of Zn2GeO4 in (210) plane at different pressures indicate: in the low-pressure region (0 < P < 9 : 7 GPa), the increase in band gap is mainly due to the covalent enhancement between atomic distances and the Ge atoms larger localization; and in the high-pressure region (P > 9 : 7 GPa), the delocalization phenomenon becomes dominant due to the fact that the delocalization action exceeds the force between the bonding state and anti-bonding state, which induces the decrease of the band gap. These results will not only help to understand the germanate crystal structures in Zn2GeO4 materials under high pressures and the unique characteristics and laws, and may provide a reference for the design of electronic devices of Zn2GeO4 crystals.

Local structural investigation of non-crystalline materials at high pressure: the case of GeO2glass

Formation And Structure Of A Dense Octahedral Glass

High-pressure EXAFS Study of Vitreousgeo2up to 44 GPa

Structural modifications of GeO$_2$ glass under high pressure and high temperature

Structural and electronic transformations of GeSe2 glass under high pressures studied by X-ray absorption spectroscopy

Probing of Bonding Changes in B2O3 Glasses at High Pressure with Inelastic X-ray Scattering

Unusual structure and properties of germanium under pressure

Pressure-Induced Drastic Collapse Of A High Oxygen Coordination Shell In Quartz-Like Alpha-Geo2

Pressure-induced transformations in a glass: In situ X-Ray diffraction and Raman spectroscopy

High-pressure Structural Behaviour of Nanocrystalline Ge

Development of chemical and topological structure in aluminosilicate liquids and glasses at high pressure

First-Principles Studies on the Structure and B–O Coordination of B 2 O 3 Glass at High Pressure

Probing of bonding changes in B[subscript 2]O[subscript 3] glasses at high pressure with inelastic X-ray scattering

Universal amorphous-amorphous transition in GexSe1-x glasses under pressure

Structural and Elastic Properties of CaGeO3 Perovskite at High Pressures

Theoretical Study on Phase Transition of Various Graphitic Structures under High Pressure

A Thorough Investigation of Electronic, Optical, Mechanical, and Thermodynamic Properties of Stable Glasslike Sodium Germanate under Compressive Hydrostatic Pressure: Ab Initio Study

Atomic Structure of Pd 81 Si 19 Glassy Alloy under High Pressure

Pressure-induced evolution of structure and electronic property of GeP

High-Pressure X-Ray-Diffraction Of Sio2 Glass

First-Principles Study on the Band-Gap Changes of Zn2geo4 under High Pressure