High Pressure Behaviour of Superconducting Boron-doped Diamond
M Abdel-Hafiez,Dinesh Kumar,R. Thiyagarajan,Q. Zhang,R. T. Howie,K. Sethupathi,O. Volkova,A. Vasiliev,W. Yang,H. K. Mao,M. S. Ramachandra Rao
2018-01-01
Abstract:M Abdel-Hafiez, Dinesh Kumar, R. Thiyagarajan, Q. Zhang, R. T. Howie, K. Sethupathi, O. Volkova, 6, 7 A. Vasiliev, 6, 7 W. Yang, H. K. Mao, and M. S. Ramachandra Rao Center for High Pressure Science and Technology Advanced Research, Beijing, 100094, China Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai, 600036, Tamil Nadu, India Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China Department of Physics, Low temperature physics laboratory, Indian Institute of Technology (IIT) Madras, Chennai, 600036, Tamil Nadu, India Low Temperature Physics and Superconductivity Department, Physics Faculty, M.V. Lomonosov Moscow State University, 119991 Moscow, Russia Theoretical Physics and Applied Mathematics Department, Ural Federal University, 620002 Ekaterinburg, Russia National University of Science and Technology ”MISiS”, Moscow 119049, Russia (Dated: July 30, 2018)