Abstract:Diamond has outstanding physical properties: the hardest known material, a wide band gap, the highest thermal conductivity, and a very high Debye temperature. In 2004, Ekimov et al. discovered that heavily boron-doped (B-doped) diamond becomes a superconductor around 4 K. Our group successfully controlled the boron concentration and synthesized homoepitaxially grown superconducting diamond films by a CVD method. By CVD method, we found that superconductivity appears when the boron concentration (nB) exceeds a metal-insulator transition concentration of 3.0x10^20 cm^-3 and its Tczero increases up to 7.4 K with increasing nB. We additionally elucidated that the holes formed at the valence band are responsible for the metallic states leading to superconductivity. The calculations predicted that the hole doping into the valence band induces strong attractive interaction and a rapid increase in Tc with increasing boron concentration. According to the calculations, if substitutional doped boron could be arranged periodically or the degree of disorder is reduced, a Tc of approximately 100 K could be achieved via minimal percent doping. In this work, we have successfully observed zero resistivity above 10 K and an onset of resistivity reduction at 25.2 K in heavily B-doped diamond film. However, the effective carrier concentration is similar to that of superconducting diamond with a lower Tc. We found that the carrier has a longer mean free path and lifetime than previously reported, indicating that this highest Tc diamond has better crystallinity compared to that of other superconducting diamond films. In addition, the susceptibility shows a small transition above 20 K in the high quality diamond, suggesting a signature of superconductivity above 20 K. These results strongly suggest that heavier carrier doped defect-free crystalline diamond could give rise to high Tc diamond.

Lattice parameters and thermal expansion of superconducting boron-doped diamonds

High-Pressure Behavior of Superconducting Boron-Doped Diamond

The superconductivity in boron-doped polycrystalline diamond thick films

Electron-Phonon Coupling In A Boron-Doped Diamond Superconductor

First principles study of structural, electronic and vibrational properties of heavily boron-doped diamond

Irradiation induced modification of the superconducting properties of heavily boron doped diamond

Effect of B-complexes on lattice structure and electronic properties in heavily boron-doped diamond

High Pressure Behaviour of Superconducting Boron-doped Diamond

Synthesis of Superconducting Boron-Doped Diamond in Carbon and Boron Solutions in Molten Gold and Copper

Superconductivity in Compression-Shear Deformed Diamond.

The Effects of Boron Doping on the Bulk and Surface Acoustic Phonons in Single-Crystal Diamond

Signature of high Tc around 25K in higher quality heavily boron-doped diamond

Optical properties of boron-doped diamond

Unraveling the Role of Boron Dimers in the Electrical Anisotropy and Superconductivity in Boron-doped diamond

Advantage on Superconductivity of Heavily Boron-Doped (111) Diamond Films

Superconductivity at 117 K in H-doped diamond

Superhard and superconductive polycrystalline boron doped diamond synthesized with different concentration of B 4 C

Microscopic Evidence for Evolution of Superconductivity by Effective Carrier Doping in Boron-doped Diamond:11B-NMR study

Compensation Ratio of Acceptor Centers in Different Growth Sectors of Boron-Doped High-Pressure High-Temperature Diamond

Resolving isotope splitting of boron-related intracenter transitions in diamond by infrared absorption spectroscopy

Boron-doped diamond growth and characteristics in a Ni-based alloy catalyst system at HPHT conditions