Abstract:Diamond has outstanding physical properties: the hardest known material, a wide band gap, the highest thermal conductivity, and a very high Debye temperature. In 2004, Ekimov et al. discovered that heavily boron-doped (B-doped) diamond becomes a superconductor around 4 K. Our group successfully controlled the boron concentration and synthesized homoepitaxially grown superconducting diamond films by a CVD method. By CVD method, we found that superconductivity appears when the boron concentration (nB) exceeds a metal-insulator transition concentration of 3.0x10^20 cm^-3 and its Tczero increases up to 7.4 K with increasing nB. We additionally elucidated that the holes formed at the valence band are responsible for the metallic states leading to superconductivity. The calculations predicted that the hole doping into the valence band induces strong attractive interaction and a rapid increase in Tc with increasing boron concentration. According to the calculations, if substitutional doped boron could be arranged periodically or the degree of disorder is reduced, a Tc of approximately 100 K could be achieved via minimal percent doping. In this work, we have successfully observed zero resistivity above 10 K and an onset of resistivity reduction at 25.2 K in heavily B-doped diamond film. However, the effective carrier concentration is similar to that of superconducting diamond with a lower Tc. We found that the carrier has a longer mean free path and lifetime than previously reported, indicating that this highest Tc diamond has better crystallinity compared to that of other superconducting diamond films. In addition, the susceptibility shows a small transition above 20 K in the high quality diamond, suggesting a signature of superconductivity above 20 K. These results strongly suggest that heavier carrier doped defect-free crystalline diamond could give rise to high Tc diamond.

Superconductivity at 117 K in H-doped diamond

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Superconductivity in graphite-diamond hybrid

Prediction of high-temperature superconductors at ambient pressure with diamond-like structures: B2CX (X = N, P)

Superconductivity in Compression-Shear Deformed Diamond.

Phonon-mediated High-T C Superconductivity in Hole-Doped Diamond-Like Crystalline Hydrocarbon

Theoretical Study on Phase Transition of Various Graphitic Structures under High Pressure

Superconductivity in Diamond-Like BC15

The superconductivity in boron-doped polycrystalline diamond thick films

Superconductor-insulator Transition Driven by Pressure-Tuned Intergrain Coupling in Nanodiamond Films

Superconductivity above 80 K in polyhydrides of hafnium

Enhanced superconductivity in C-S-H compounds at high pressure

Signature of high Tc around 25K in higher quality heavily boron-doped diamond

Lattice parameters and thermal expansion of superconducting boron-doped diamonds

Growth and Annealing Study of Hydrogen-Doped Single Diamond Crystals under High Pressure and High Temperature

High-Pressure Behavior of Superconducting Boron-Doped Diamond

High Pressure Behaviour of Superconducting Boron-doped Diamond

Migdal-Eliashberg theory of multi-band high-temperature superconductivity in field-effect-doped hydrogenated (111) diamond

New Methods for Investigating Superconductivity at Very High Pressures

High-pressure synthesis of superconducting Sn$_{3}$S$_{4}$ using diamond anvil cell with boron-doped diamond heater

Superhard and Superconductive Polycrystalline Boron Doped Diamond Synthesized with Different Concentration of B4C