Abstract:Diamond has outstanding physical properties: the hardest known material, a wide band gap, the highest thermal conductivity, and a very high Debye temperature. In 2004, Ekimov et al. discovered that heavily boron-doped (B-doped) diamond becomes a superconductor around 4 K. Our group successfully controlled the boron concentration and synthesized homoepitaxially grown superconducting diamond films by a CVD method. By CVD method, we found that superconductivity appears when the boron concentration (nB) exceeds a metal-insulator transition concentration of 3.0x10^20 cm^-3 and its Tczero increases up to 7.4 K with increasing nB. We additionally elucidated that the holes formed at the valence band are responsible for the metallic states leading to superconductivity. The calculations predicted that the hole doping into the valence band induces strong attractive interaction and a rapid increase in Tc with increasing boron concentration. According to the calculations, if substitutional doped boron could be arranged periodically or the degree of disorder is reduced, a Tc of approximately 100 K could be achieved via minimal percent doping. In this work, we have successfully observed zero resistivity above 10 K and an onset of resistivity reduction at 25.2 K in heavily B-doped diamond film. However, the effective carrier concentration is similar to that of superconducting diamond with a lower Tc. We found that the carrier has a longer mean free path and lifetime than previously reported, indicating that this highest Tc diamond has better crystallinity compared to that of other superconducting diamond films. In addition, the susceptibility shows a small transition above 20 K in the high quality diamond, suggesting a signature of superconductivity above 20 K. These results strongly suggest that heavier carrier doped defect-free crystalline diamond could give rise to high Tc diamond.

Superconductivity in Compression-Shear Deformed Diamond.

Electron-Phonon Coupling In A Boron-Doped Diamond Superconductor

Signature of high Tc around 25K in higher quality heavily boron-doped diamond

Superconductivity at 117 K in H-doped diamond

The superconductivity in boron-doped polycrystalline diamond thick films

Superconductor-insulator Transition Driven by Pressure-Tuned Intergrain Coupling in Nanodiamond Films

Superconductivity in graphite-diamond hybrid

Anomalous Thermal Response of Bulk Diamond to Uniaxial (100) Strain: A First-Principles Prediction

Superconductivity and metallic behavior in heavily doped bulk single crystal diamond and graphene/diamond heterostructure

Irradiation induced modification of the superconducting properties of heavily boron doped diamond

Superconductivity and Metallic Behavior in Heavily Doped Bulk Single Crystal Diamond and Novel Transportation Behavior at Graphene/Diamond Heterostructure

Superconductivity in Diamond-Like BC15

Superconductivity in Shear Strained Semiconductors

Lattice parameters and thermal expansion of superconducting boron-doped diamonds

Extreme Elastic Deformation of Atoms and Pressure-Induced Superconductivity in Silicon

Unraveling the Role of Boron Dimers in the Electrical Anisotropy and Superconductivity in Boron-doped diamond

Unlocking high hole mobility in diamond over a wide temperature range via efficient shear strain

High-Pressure Behavior of Superconducting Boron-Doped Diamond

Superhard and Superconductive Polycrystalline Boron Doped Diamond Synthesized with Different Concentration of B4C

Synthesis of Superconducting Boron-Doped Diamond in Carbon and Boron Solutions in Molten Gold and Copper

Superconductivity in Polycrystalline Diamond Thin Films