Abstract:Diamond has outstanding physical properties: the hardest known material, a wide band gap, the highest thermal conductivity, and a very high Debye temperature. In 2004, Ekimov et al. discovered that heavily boron-doped (B-doped) diamond becomes a superconductor around 4 K. Our group successfully controlled the boron concentration and synthesized homoepitaxially grown superconducting diamond films by a CVD method. By CVD method, we found that superconductivity appears when the boron concentration (nB) exceeds a metal-insulator transition concentration of 3.0x10^20 cm^-3 and its Tczero increases up to 7.4 K with increasing nB. We additionally elucidated that the holes formed at the valence band are responsible for the metallic states leading to superconductivity. The calculations predicted that the hole doping into the valence band induces strong attractive interaction and a rapid increase in Tc with increasing boron concentration. According to the calculations, if substitutional doped boron could be arranged periodically or the degree of disorder is reduced, a Tc of approximately 100 K could be achieved via minimal percent doping. In this work, we have successfully observed zero resistivity above 10 K and an onset of resistivity reduction at 25.2 K in heavily B-doped diamond film. However, the effective carrier concentration is similar to that of superconducting diamond with a lower Tc. We found that the carrier has a longer mean free path and lifetime than previously reported, indicating that this highest Tc diamond has better crystallinity compared to that of other superconducting diamond films. In addition, the susceptibility shows a small transition above 20 K in the high quality diamond, suggesting a signature of superconductivity above 20 K. These results strongly suggest that heavier carrier doped defect-free crystalline diamond could give rise to high Tc diamond.

Synthesis of Superconducting Boron-Doped Diamond in Carbon and Boron Solutions in Molten Gold and Copper

Gold and silver: Noble solvents for the synthesis of superconducting boron-doped diamonds

Superhard solid solutions of diamond and cubic boron nitride

Lattice parameters and thermal expansion of superconducting boron-doped diamonds

Highly Boron-Doped Graphite and Diamond Synthesized From Adamantane and Ortho-Carborane under High Pressure

Superconductivity in Compression-Shear Deformed Diamond.

Superhard and Superconductive Polycrystalline Boron Doped Diamond Synthesized with Different Concentration of B4C

The superconductivity in boron-doped polycrystalline diamond thick films

Effect of B-S co-doping on large diamonds synthesis under high pressure and high temperature

Superhard and superconductive polycrystalline boron doped diamond synthesized with different concentration of B 4 C

Boron-doped diamond growth and characteristics in a Ni-based alloy catalyst system at HPHT conditions

High Pressure High Temperature Synthesis of Highly Boron Doped Diamond Microparticles and Porous Electrodes for Electrochemical Applications

High pressure and high temperature synthesis of a new boron carbide phase

Transformations in phenylboronic acid at high pressures and temperatures

Superconductivity in Diamond-Like BC15

High Pressure Behaviour of Superconducting Boron-doped Diamond

Signature of high Tc around 25K in higher quality heavily boron-doped diamond

Irradiation induced modification of the superconducting properties of heavily boron doped diamond

Synthesis and characterization of boron and nitrogen co-doped diamond crystals under high pressure and high temperature conditions (vol 19, pg 4571, 2017)

High-pressure synthesis of superconducting Sn$_{3}$S$_{4}$ using diamond anvil cell with boron-doped diamond heater

Synthesis of N-type semiconductor diamonds with sulfur, boron co-doping in FeNiMnCo-C system at high pressure and high temperature