Abstract:Diamond has outstanding physical properties: the hardest known material, a wide band gap, the highest thermal conductivity, and a very high Debye temperature. In 2004, Ekimov et al. discovered that heavily boron-doped (B-doped) diamond becomes a superconductor around 4 K. Our group successfully controlled the boron concentration and synthesized homoepitaxially grown superconducting diamond films by a CVD method. By CVD method, we found that superconductivity appears when the boron concentration (nB) exceeds a metal-insulator transition concentration of 3.0x10^20 cm^-3 and its Tczero increases up to 7.4 K with increasing nB. We additionally elucidated that the holes formed at the valence band are responsible for the metallic states leading to superconductivity. The calculations predicted that the hole doping into the valence band induces strong attractive interaction and a rapid increase in Tc with increasing boron concentration. According to the calculations, if substitutional doped boron could be arranged periodically or the degree of disorder is reduced, a Tc of approximately 100 K could be achieved via minimal percent doping. In this work, we have successfully observed zero resistivity above 10 K and an onset of resistivity reduction at 25.2 K in heavily B-doped diamond film. However, the effective carrier concentration is similar to that of superconducting diamond with a lower Tc. We found that the carrier has a longer mean free path and lifetime than previously reported, indicating that this highest Tc diamond has better crystallinity compared to that of other superconducting diamond films. In addition, the susceptibility shows a small transition above 20 K in the high quality diamond, suggesting a signature of superconductivity above 20 K. These results strongly suggest that heavier carrier doped defect-free crystalline diamond could give rise to high Tc diamond.

Superconductivity in Polycrystalline Diamond Thin Films

The superconductivity in boron-doped polycrystalline diamond thick films

Advantage on Superconductivity of Heavily Boron-Doped (111) Diamond Films

Signature of high Tc around 25K in higher quality heavily boron-doped diamond

Synthesis and characterization of niobium carbide thin films on diamond surface for superconductive application

Superconductivity in Compression-Shear Deformed Diamond.

Influence of Boron Dopant on Switching Behaviour of Polycrystalline Diamond Thin Films

Irradiation induced modification of the superconducting properties of heavily boron doped diamond

Fracture Strength and Toughness of Chemical-Vapor-deposited Polycrystalline Diamond Films

Very high growth rate chemical vapor deposition of single-crystal diamond.

Superconductivity in Heavily Boron-Doped Diamond Films Prepared by Electron Assisted Chemical Vapour Deposition Method

The 7-in. freestanding diamond thermal conductive film fabricated by DC arc Plasma Jet CVD with multi-stage magnetic fields

STUDY OF THE PREPARATION OF HIGH Tc SUPERCONDUCTING YBCO THIN FILMS BY A PLASMA-ASSISTED MOCVD PROCESS

Heavily boron-doped polycrystalline diamond films: Microstructure, chemical composition investigation and plasma in-situ diagnostics

N-Type Doping of Highly Tetrahedral Diamond-Like Amorphous Carbon

Superhard and superconductive polycrystalline boron doped diamond synthesized with different concentration of B 4 C

Single-crystal diamond growth by hot-filament CVD: a recent advances for doping, growth rate and defect controls

Superconductivity at 117 K in H-doped diamond

Study of Electrical Conductivity in Boron/Hydrogen-Doped Diamond Film

Boron Doped Diamond Films: A Microwave Attenuation Material With High Thermal Conductivity

High-speed growth of high-quality polycrystalline diamond films by MPCVD