Abstract:Microwave plasma assisted chemical vapor deposition (MPCVD) is the established technique to produce high quality single crystal diamond (SCD). While typical pressures for SCD growth regimes in methane-hydrogen plasma are currently within 100–300 Torr, a transition to much high pressures promises enhanced growth rates. Here, we report on successful SCD synthesis by MPCVD in CH4-H2 gas mixtures at pressures up to 600 Tорр. A strong change of the plasma shape and volume (the latter shrinks by 10 times at fixed MW power) with pressure rise from 100 to 600 Torr was observed, still keeping the plasma stable. The record high absorbed MW power density of ≈1800 W/cm3 was achieved at 600 Torr. Optical emission spectroscopy (OES) was used for the plasma analysis via monitoring emission intensities of radicals Hα, C2 and CH. The gas temperature Tg determined from analysis of rotational fine structure of OES Swan transitions of dimer C2 (516 nm) turned out to be essentially constant ∼ 3100 ± 150 K over the pressure range explored. The diamond growth rate is found to increase by an order of magnitude with pressure to achieve 57 μm/h at 500 Torr at relatively low (4%) CH4 concentration, as measured in situ using low-coherence interferometry, but declined at further pressure increase. The produced films were characterized with SEM, XRD, Raman and photoluminescence spectroscopy, and a high/moderate quality of the obtained material was confirmed.

Very high growth rate chemical vapor deposition of single-crystal diamond.

High-rate growth of single-crystal diamond with an atomically flat surface by microwave plasma chemical vapor deposition

Recent advances in high-growth rate single-crystal CVD diamond

Enhanced Growth Of High Quality Single Crystal Diamond By Microwave Plasma Assisted Chemical Vapor Deposition At High Gas Pressures

Large Area Single-Crystal Diamond Synthesis by 915 MHz Microwave Plasma-Assisted Chemical Vapor Deposition

High optical quality multicarat single crystal diamond produced by chemical vapor deposition

Developments in synthesis, characterization, and application of large, high-quality CVD single crystal diamond

High-speed growth of high-quality polycrystalline diamond films by MPCVD

Recent progress in homoepitaxial single-crystal diamond growth via MPCVD

Single crystal diamond growth by MPCVD at subatmospheric pressures

Ultrahard diamond single crystals from chemical vapor deposition

Growth of single-crystal diamond by microwave plasma CVD with high precursor utilization using cyclic gas injection and control of carbonaceous species content with optical emission spectroscopy

Chemical Vapor Deposition Single‐Crystal Diamond: A Review

Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System

Enhanced deposition rate of polycrystalline CVD diamond at high microwave power densities

High quality CVD single crystal diamonds grown on nanorods patterned diamond seed

Mechanical properties of high-crystalline diamond films grown via laser MPCVD

Crystalline Diamond Growth in Thin Films Deposited from a CH4/Ar Rf Plasma

Microwave power and chamber pressure studies for single-crystalline diamond film growth using microwave plasma CVD

Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

Developments in Microwave Plasma Chemical Vapor Deposition Technology for Preparing High Quality Diamond Films