Abstract:A novel design of the gas inlet system in a diamond microwave plasma chemical vapor deposition growth chamber has been reported in this paper. The design is targeting for high-quality, high-speed, and high-efficiency diamond material fabrication. By introducing a gas inlet hole into the susceptor, we expand the ways of gas introduction for diamond growth. After extensive numerical and experimental investigation, we have found that the introduction of methane and doping gas inlet from the hole of below while the hydrogen from the top is feasible for realizing the target. The growth and doping species could be confined around the substrate, making efficient usage of the precursors. The plasma state change caused by the difference of the gas inlet modes has been ascribed to the resulted gas distribution in the chamber. The measured growth rate has been increased to 32 μm/h, which is 16 times higher than traditional gas inlet configuration. Meanwhile, a large improvement of the nitrogen doping concentration has been achieved. Besides, with the increase of growth rate and nitrogen incorporation efficiency, the crystal quality and surface morphology keep in an acceptable degree. In this mode, the dual gas flow system can perfectly solve the contradiction among the crystal quality, growth rate, and doping efficiency, commonly existing during the material fabrication process, the chamber contamination could be significantly suppressed due to the constrained distribution of methyl and doping species, making the fabrication cost much lower. The results of repetitive experiments indicate that other residual impurities present in the chamber of MPCVD could likely regulate the threshold concentration of nitrogen required for accelerating the growth rate during the nitrogen doped diamond growth, which have a significant effect on the diamond growth.

Developments in Microwave Plasma Chemical Vapor Deposition Technology for Preparing High Quality Diamond Films

Very high growth rate chemical vapor deposition of single-crystal diamond.

High-speed growth of high-quality polycrystalline diamond films by MPCVD

Recent progress in homoepitaxial single-crystal diamond growth via MPCVD

High-rate growth of single-crystal diamond with an atomically flat surface by microwave plasma chemical vapor deposition

Developments in synthesis, characterization, and application of large, high-quality CVD single crystal diamond

Effect of Input Power on the Deposition of Optical Grade Thick Diamond Film in A Dcpj Cvd Jet System

Scanning Deposition Method for Large-Area Diamond Film Synthesis Using Multiple Microwave Plasma Sources

An innovative gas inlet design in a microwave plasma chemical vapor deposition chamber for high-quality, high-speed, and high-efficiency diamond growth

[Optical Spectroscopy for High-Pressure Microwave Plasma Chemical Vapor Deposition of Diamond Films]

Effects of the electric field at the edge of a substrate to deposit a Ø100 mm uniform diamond film in a 2.45 GHz MPCVD system

The Development of Ultra-Fast Pulse Laser Deposition of Diamond-Like Carbon Films

Microwave power and chamber pressure studies for single-crystalline diamond film growth using microwave plasma CVD

Enhanced deposition rate of polycrystalline CVD diamond at high microwave power densities

Advances in deposition of diamond films on cemented carbide and progress of diamond coated cutting tools

Morphologies and structures of chemical vapor deposited diamond films and film-substrate interfaces

Study on the Simulation and Experimental Impact of Substrate Holder Design on 3-Inch High-Quality Polycrystalline Diamond Thin Film Growth in a 2.45 GHz Resonant Cavity MPCVD

Mechanical properties of high-crystalline diamond films grown via laser MPCVD

A novel microwave plasma reactor with a unique structure for chemical vapor deposition of diamond films

Elective Deposition of Diamond Films on Si (100) Substrates

A Study of Diamond-Like Carbon Thin Films Prepared by Microwave Plasma Chemical Vapour Deposition