Truong Thi Hien,Jaesung Park,Kwak Taemyeong,Cuong Manh Nguyen,Jeong Hyun Shim,Sangwon Oh
Abstract:A smooth diamond film, characterized by exceptional thermal conductivity, chemical stability, and optical properties, is highly suitable for a wide range of advanced applications. However, achieving uniform film quality presents a significant challenge for the CVD method due to non-uniformities in microwave distribution, electric fields, and the densities of reactive radicals during deposition processes involving $CH_4$ and $H_2$ precursors. Here, we systematically investigate the effects of microwave power and chamber pressure on surface roughness, crystalline quality, and the uniformity of diamond films. These findings provide valuable insights into the production of atomically smooth, high-quality diamond films with enhanced uniformity. By optimizing deposition parameters, we achieved a root-mean-square (RMS) surface roughness of 2 nm, comparable to high-pressure, high-temperature (HPHT) diamond substrates. Moreover, these conditions facilitated the formation of a pure single-crystal diamond phase, confirmed by the absence of contamination peaks in the Raman spectra
What problem does this paper attempt to address?
### Problems the Paper Attempts to Solve
The paper aims to address the issue of achieving uniformity and high quality of the surface of single-crystal diamond films grown by microwave plasma chemical vapor deposition (MP-CVD). Specifically, the authors systematically study the effects of microwave power and chamber pressure on the surface roughness, crystallinity, and uniformity of diamond films.
### Background and Challenges
Due to its excellent thermal conductivity, chemical stability, and optical properties, diamond is widely used in various advanced applications. However, when preparing diamond films using the CVD method, it is challenging to achieve uniform film quality due to the uneven distribution of microwaves, electric fields, and reactive radical densities. These issues result in quality differences between the center and edge regions of the film, affecting its practical applications.
### Research Methods
1. **Experimental Design**:
- Use a mixture of CH₄ and H₂ gases, with a small amount of O₂ gas added.
- Systematically vary the microwave power (from 2,700 W to 4,300 W) and chamber pressure (from 100 Torr to 140 Torr) to evaluate the effects of these parameters on film morphology, surface roughness, and crystallinity.
- Characterize the films using optical microscopy (OM), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Raman spectroscopy.
2. **Results Analysis**:
- **Effect of Microwave Power**: As microwave power increases, the brightness distribution on the film surface becomes more uniform, and surface roughness decreases. The optimal microwave power is 3,900 W, at which the film's surface roughness (RMS) reaches a minimum of 2.0 nm, comparable to that of high-pressure high-temperature (HPHT) diamond substrates.
- **Effect of Chamber Pressure**: When the chamber pressure exceeds 120 Torr, the surface roughness of the film significantly deteriorates. The optimal chamber pressure is 120 Torr, at which the film's surface roughness also reaches a minimum of 2.0 nm.
- **Raman Spectroscopy Analysis**: Under optimal conditions (3,900 W and 120 Torr), Raman spectroscopy shows a strong single-crystal diamond peak (1,332.2 cm⁻¹), indicating high film quality and purity.
### Conclusion
By optimizing microwave power and chamber pressure, the authors successfully prepared single-crystal diamond films with surface roughness as low as 2 nm and high crystallinity. These results provide important references for producing atomically smooth, high-quality diamond films, enhancing their application performance in optics, electronics, mechanics, chemistry, and biomedicine.