Abstract:The conductivity of hydrogen-terminated diamond is a limiting factor in its application in field-effect transistor devices. The traditional preparation process hinders the improvement of the electrical properties of hydrogen-terminated diamond due to impurity elements in the diamond bulk and surface damage caused by processing near the diamond surface. To overcome this, researchers have explored the epitaxial growth of a high-purity and flat-surfaced diamond thin film on a diamond substrate. However, this approach still faces challenges in film characterization and achieving high surface smoothness. In this study, microwave plasma chemical vapor deposition technology is used to epitaxially grow a sub-micron thick diamond film on a nitrogen-doping CVD diamond substrate measuring 10mm x 10mm x 0.5mm. The influence of methane concentrations on the growth and conductivity of diamond films is investigated. The test results reveal that the growth thickness of the diamond film ranges from 230 nm to 810 nm, and the nitrogen concentration in the epitaxial layer is lower than 1×10 16 Atom/cm 3 . Three growth modes are observed for the homoepitaxial growth of the diamond thin film under different methane concentrations. A methane concentration of 4% enables two-dimensional planar growth of diamond, resulting in a smooth and flat surface with a roughness of 0.225nm (10×10μm 2 ). The formation of different surface morphologies is attributed to the growth and etching processes of diamond. Surface LEED testing indicates that the surface of the diamond film undergoes a structural transition from oxygen terminals (1×1: O) to hydrogen terminals (2×1: H) when grown for a short period of time. XPS analysis reveals an extremely low proportion of oxygen and nitrogen elements, giving the grown diamond film P-type conductivity characteristics. The Hall test results demonstrate that the hydrogen-terminated diamond film grown with a methane concentration of 4% exhibits the highest conductivity, with a square resistance of 4981 Ω/□ and a hole mobility of 207 cm 2 /Vs. This enhanced conductivity can be attributed to the lower defect density observed under these specific conditions. The findings of this study contribute to the advancement and practical application of high-power diamond devices by effectively enhancing the electrical characteristics of hydrogen-terminated diamond.

High-rate growth of single-crystal diamond with an atomically flat surface by microwave plasma chemical vapor deposition

Very high growth rate chemical vapor deposition of single-crystal diamond.

High-speed growth of high-quality polycrystalline diamond films by MPCVD

High quality CVD single crystal diamonds grown on nanorods patterned diamond seed

Recent advances in high-growth rate single-crystal CVD diamond

Recent progress in homoepitaxial single-crystal diamond growth via MPCVD

Enhanced Growth Of High Quality Single Crystal Diamond By Microwave Plasma Assisted Chemical Vapor Deposition At High Gas Pressures

Microwave power and chamber pressure studies for single-crystalline diamond film growth using microwave plasma CVD

H-Terminated Diamond MOSFETs on High-Quality Diamond Film Grown by MPCVD

Large Area Single-Crystal Diamond Synthesis by 915 MHz Microwave Plasma-Assisted Chemical Vapor Deposition

Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System

Nanocrystalline Diamond Film Grown by Pulsed Linear Antenna Microwave CVD

Growth and Surface Structrue Research of Hydrogen Terminal Diamond Thin Films

Developments in synthesis, characterization, and application of large, high-quality CVD single crystal diamond

Mechanical properties of high-crystalline diamond films grown via laser MPCVD

Growth of single-crystal diamond by microwave plasma CVD with high precursor utilization using cyclic gas injection and control of carbonaceous species content with optical emission spectroscopy

Surface etching evolution of mechanically polished single crystal diamond with subsurface cleavage in microwave hydrogen plasma: Topography, state and electrical properties

High quality nanocrystalline diamond films grown by RF-HFCVD

Chemical Vapor Deposition Single‐Crystal Diamond: A Review

Enhanced deposition rate of polycrystalline CVD diamond at high microwave power densities

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture