Abstract:The conductivity of hydrogen-terminated diamond is a limiting factor in its application in field-effect transistor devices. The traditional preparation process hinders the improvement of the electrical properties of hydrogen-terminated diamond due to impurity elements in the diamond bulk and surface damage caused by processing near the diamond surface. To overcome this, researchers have explored the epitaxial growth of a high-purity and flat-surfaced diamond thin film on a diamond substrate. However, this approach still faces challenges in film characterization and achieving high surface smoothness. In this study, microwave plasma chemical vapor deposition technology is used to epitaxially grow a sub-micron thick diamond film on a nitrogen-doping CVD diamond substrate measuring 10mm x 10mm x 0.5mm. The influence of methane concentrations on the growth and conductivity of diamond films is investigated. The test results reveal that the growth thickness of the diamond film ranges from 230 nm to 810 nm, and the nitrogen concentration in the epitaxial layer is lower than 1×10 16 Atom/cm 3 . Three growth modes are observed for the homoepitaxial growth of the diamond thin film under different methane concentrations. A methane concentration of 4% enables two-dimensional planar growth of diamond, resulting in a smooth and flat surface with a roughness of 0.225nm (10×10μm 2 ). The formation of different surface morphologies is attributed to the growth and etching processes of diamond. Surface LEED testing indicates that the surface of the diamond film undergoes a structural transition from oxygen terminals (1×1: O) to hydrogen terminals (2×1: H) when grown for a short period of time. XPS analysis reveals an extremely low proportion of oxygen and nitrogen elements, giving the grown diamond film P-type conductivity characteristics. The Hall test results demonstrate that the hydrogen-terminated diamond film grown with a methane concentration of 4% exhibits the highest conductivity, with a square resistance of 4981 Ω/□ and a hole mobility of 207 cm 2 /Vs. This enhanced conductivity can be attributed to the lower defect density observed under these specific conditions. The findings of this study contribute to the advancement and practical application of high-power diamond devices by effectively enhancing the electrical characteristics of hydrogen-terminated diamond.

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