Abstract:Isotopic enrichment offers cutting-edge properties of materials opening exciting research and development opportunities. In semiconductors, reached progress of ultimate control in growth and doping techniques follows nowadays the high level isotopic purification. This requires deep understanding of isotopic disorder effects and techniques of their effective determination. Isotopic content of both crystal lattice and impurity centers cause the effects, which can be examined by different optical techniques. While disorder in the host lattice can be straight forward evaluated by inelastic light scattering or by SIMS measurements, determination of isotopic contributions of many orders less presented impurities remains challenging and usually observed in high-resolution photoluminescence or optical absorption spectra. Boron-doped diamonds exhibit complex infrared absorption spectra while boron-related luminescence remains unobserved. Boron, as a most light element acting as a hydrogen-like dopant in elemental semiconductors, has a largest relative difference in its isotope masses, and by this, cause the largest isotopic disorder in semiconductors, including diamond, an elemental semiconductor with the lightest atomic mass of a host lattice. This enables an access to the isotopic constitution of boron in diamond by infrared absorption spectroscopy. By comparison of low-temperature absorption spectra of a natural (20% of 10B and 80% of 11B isotopes) and 11B enriched (up to 99%) doped diamonds we differentiate the intracenter transitions related to 10B and to 11B isotopes. We have found that the isotopic spectral lines of the same boron intracenter transition are separated with the energy of about 0.7 meV. This is the largest impurity isotopic shift ever observed in semiconductors doped by hydrogen-like impurity centers.

Compensation Ratio of Acceptor Centers in Different Growth Sectors of Boron-Doped High-Pressure High-Temperature Diamond

Light B Doping by Ion Implantation into High‐Purity Heteroepitaxial Diamond

Boron‐Doped Single‐Crystal Diamond Growth on Heteroepitaxial Diamond Substrate Using Microwave Plasma Chemical Vapor Deposition

Resolving isotope splitting of boron-related intracenter transitions in diamond by infrared absorption spectroscopy

High Pressure High Temperature Synthesis of Highly Boron Doped Diamond Microparticles and Porous Electrodes for Electrochemical Applications

Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth

Study of Electrical Conductivity in Boron/Hydrogen-Doped Diamond Film

Growth Morphology of Boron Doped Single Crystal Diamond

Thermal Diffusion Boron Doping of Single-Crystal Diamond

Significant enhancement of electrical conductivity in boron-doped diamond through HPHT post-annealing treatment

In situ boron doping during heteroepitaxial growth of diamond on Ir/YSZ/Si

Thermal diffusion boron doping of single-crystal natural diamond

Thermal Diffusion Doping of Single Crystal Diamond

Boron-doped diamond growth and characteristics in a Ni-based alloy catalyst system at HPHT conditions

Orientation-dependent electric transport and band filling in hole co-doped epitaxial diamond films

High Voltage Schottky Barrier Diodes In Synthetic Single Crystal Diamond

Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition

Optical and Electrical Characterization of Boron-Doped Diamond

The Effects of Boron Doping on the Bulk and Surface Acoustic Phonons in Single-Crystal Diamond

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

Irradiation induced modification of the superconducting properties of heavily boron doped diamond