Boron‐Doped Single‐Crystal Diamond Growth on Heteroepitaxial Diamond Substrate Using Microwave Plasma Chemical Vapor Deposition

Taemyung Kwak,Jonggun Lee,Geunho Yoo,Heejin Shin,Uiho Choi,Byeongchan So,Seongwoo Kim,Okhyun Nam

DOI: https://doi.org/10.1002/pssa.201900973

2020-05-04

physica status solidi (a)

Abstract:<p>Boron‐doped diamond layers were grown on freestanding heteroepitaxial diamond substrates by microwave plasma chemical vapor deposition (MPCVD) to verify the high potential of large‐size heteroepitaxial diamond as an ultimate semiconductor material. Owing to the high crystallinity and atomically flat surface morphology of the substrate, the MPCVD‐grown boron‐doped diamond layer exhibited excellent surface properties and crystallinity, as measured by X‐ray diffraction and atomic force microscopy. The temperature‐dependent Hall effect measurements were conducted at temperature ranges between 300‐800 K with cloverleaf‐shaped van der Pauw geometry. The hole concentration of boron‐doped diamond samples was between 1.1 ×10¹⁵ and 5 ×10¹⁹cm⁻³ at room temperature, and the resistivity was controlled between 10⁻¹ and 20 Ω cm by changing boron to carbon ratio. A specific contact resistance as low as 1.41×10⁻⁴ Ω cm² was obtained via annealing at 500 °C. The activation energy of the boron‐doped diamond layers was reduced from 0.35eV to 0.12eV as the amount of boron dopant increases, which is attributed to the formation of impurity band. Finally, the change of the carrier mobility of boron‐doped heteroepitaxial diamond was discussed based on the scattering mechanism.</p><p>This article is protected by copyright. All rights reserved.</p>