Abstract:The boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) oriented Type Ib diamond substrates using a Microwave Plasma Chemical Vapor Deposition (MPCVD) technique. Raman spectrum showed a few additional bands at the lower wavenumber regions along with the zone center optical phonon mode for diamond. The change in the peak profile of the zone center optical phonon mode and its downshift were observed with the increasing boron content in the film. A modification in surface morphology of the film with increasing boron content had been observed by atomic force microscopy. Four point probe electrical measurement indicated that different conduction mechanisms are operating in various temperature regions for these semiconducting films.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to prepare high - quality boron - doped single - crystal diamond films by optimizing the microwave plasma - assisted chemical vapor deposition (MPCVD) method and to study the influence of boron doping on the optical and electrical properties of diamond films. Specifically, the paper focuses on the following aspects: 1. **Optimization of growth conditions**: Optimize the growth conditions of boron - doped single - crystal diamond films by adjusting the MPCVD process parameters (such as boron content, gas ratio, temperature, etc.). 2. **Analysis of optical properties**: Use Raman spectroscopy to study the influence of boron doping on the optical properties of diamond films, especially observing the shift and broadening of Raman peaks. 3. **Analysis of electrical properties**: Use the four - probe measurement method to study the influence of boron doping on the conductivity and resistivity of diamond films, and explore the carrier activation energy and conduction mechanism at different temperatures. 4. **Surface morphology change**: Use atomic force microscopy (AFM) to observe the influence of boron doping on the surface morphology of diamond films, and find that with the increase of boron content, the step bunching phenomenon appears on the surface. 5. **Crystal quality evaluation**: Evaluate the crystal quality of boron - doped single - crystal diamond films by X - ray rocking curve measurement. 6. **Application prospects**: Explore the potential applications of highly - doped boron single - crystal diamond in electronic devices, especially its possibility as a material for high - power electronic devices. Through these studies, the author aims to deeply understand the influence of boron doping on the physical properties of diamond and provide theoretical and experimental basis for the future development of high - performance diamond - based electronic devices.

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