The superconductivity in boron-doped polycrystalline diamond thick films
Z.L. Wang,Q. Luo,L.W. Liu,C.Y. Li,H.X. Yang,H.F. Yang,J.J. Li,X.Y. Lu,Z.S. Jin,L. Lu,C.Z. Gu
DOI: https://doi.org/10.1016/j.diamond.2005.12.035
IF: 3.806
2006-01-01
Diamond and Related Materials
Abstract:Boron-doped polycrystalline diamond thick film was prepared by a hot filament chemical vapor deposition (HFCVD) method. The morphology and structure of the diamond were evaluated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and micro-Raman spectroscopy. The carrier concentration of the boron-doped diamond was 7.3×1020 cm−3, determined by a Hall measurement system. The transport measurements show that the boron-doped diamond thick film is superconductive and the superconducting transition temperatures are 10 K for Tc onset and 8.3 K for zero resistance, and there is a strong diamagnetic response in the alternating current (AC) magnetic susceptibility of the boron-doped diamond sample below 8.9 K. Such a high Tc value can be attributed to the higher efficiency of doping, contraction of the reconstructed bonds and two-dimensional nature of the surface states for diamond thick films, all together inducing a stronger electron–phonon coupling.