Abstract:The growth of cubic boron nitride (cBN) films on bare silicon and amorphous tetrahedral carbon (ta-C) layers prepared on silicon substrates was studied. The cBN films were prepared by radio frequency magnetron sputter deposition at approximately 870 degrees C. The original ta-C interlayers were graphitized and restructured under high temperature and possibly under ion bombardment during BN deposition. The majority of graphitic basal planes were nearly perpendicular to the surface of silicon substrates. The BN films grown on these restructured carbon layers were deposited with higher content of cubic phase and did not show delamination signs. Turbostratic BN (tBN) basal planes extended carbon basal planes and their edges served as cBN nucleation sites. The cBN films grown on textured ta-C interlayers were insensitive to the ambient environment. The residual sp(3)-bonded carbon phase confined in the interlayers probably acts as a diffusion barrier preventing the oxidation of dangling bonds near BN interface and thus precludes weakening the interface as a result of volume expansion. The carbon interlayers also improve the crystallinity of the oriented tBN because they are continuation of carbon graphitic basal planes so that the volume fraction of nitrogen-void (N-void) defects in the sp(2)-bonded BN intermediate layers is reduced. The strong sp(3)-bonded carbon matrix could thereto withstand large compressive stress and facilitates deposition of thicker cBN films.

BN Films Deposited by HFPECVD and the Mechanism of the Process

Growth of BN1-xPx Films by HF-PECVD

PREPARATION OF B-N FILMS BY ION BEAM ASSISTED DEPOSITION

Composition and Structure of BCN Films Prepared by Ion Beam-Assisted Pulsed Laser Deposition

Dielectric Barrier Discharge Assisted Chemical Vapor Deposition of Boron Nitride Phosphide Films on A Quartz Substrate

Phase evolution in boron nitride thin films prepared by a dc-gasdischarge assisted pulsed laser deposition

Field-Ionization Source Induced Phase Transition from Hbn to Cbn During Pulsed Laser Deposition

Preparation of cubic boron nitride films by radio frequency magnetron sputtering and radio frequency ion plating

Mechanical Properties and Bonding Structure of Boron Carbon Nitride Films Synthesized by Dual Ion Beam Sputtering

Energy fluxes in a radio-frequency magnetron discharge for the deposition of superhard cubic boron nitride coatings

Electron Cyclotron Resonance Plasma-Assisted Pulsed Laser Deposition of Boron Carbon Nitride Films

Investigation of Carbon Nitride Films Deposited by Ion Beam-Assisted Deposition with Low Bombarding Energy of N Ions

Turbostratic Boron Carbonitride Films Produced by Bias-Assisted Hot Filament Chemical Vapor Deposition

Growth of CN Films by Reactive Ionized Cluster Beam Deposition

Transition from amorphous boron carbide to hexagonal boron carbon nitride thin films induced by nitrogen ion assistance

Ion-beam-assisted Deposition of CNx Films

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Investigation on the Microstructure and Optical Properties of C-Axis Oriented Nanocrystalline Hexagonal Bn Films Fabricated by Hot-Filament Chemical Vapor Deposition

Optical & Electronic Properties of Carbon Nitride Thin Films

Studying the growth of cubic boron nitride on amorphous tetrahedral carbon interlayers

Study of the phase nature of boron- and nitrogen-containing films by optical and photoelectron spectroscopy