Growth of BN1-xPx Films by HF-PECVD

XU Shi-you,ZHANG Xi-wen,HAN Gao-rong
DOI: https://doi.org/10.3321/j.issn:1001-9731.2005.03.044
2005-01-01
Abstract:BN_(1-x)P_x thin films were deposited by hot filament assistant r.f. plasma enhanced chemical vapor technique (HF-PECVD) on quarts glass polished wafer substrates. X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS),Energy dispersive X-ray spectrum (EDAX) and UV-Vis were used to study the microstructure, morphology and band gap of the films. No phase separation was observed. The relative percent of phosphorus of these films increases with the increasing of flux of PH_3, while the optic bandgap of these films becomes narrow. The optical band gap of BN_(1-x)P_x thin films can be modulated through changing the quantity of phosphorus doping.
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