Abstract:Photoluminescence (PL), X-ray diffraction (XRD) and Raman spectra have been measured to characterize the effects of phosphorus on the optical and structural properties of GaN1−xPx alloys with x⩽15%, grown by means of light-radiation heating, low-pressure metal-organic chemical vapor deposition. The PL spectra of GaN1−xPx show the largest red shift of 100 meV from the band-edge emission of GaN. XRD rocking curves show that the (0002) peak of GaN1−xPx shifts to smaller angles with increasing P content. The Raman spectra of GaN1−xPx, recorded in backscattering geometry, exhibit four new vibrational modes at 256, 314, 377 and 428 cm−1 compared with an undoped GaN sample. The modes at 377 and 428 cm−1 are attributed to gap modes related to the Ga–P bond vibrations, whereas the other two modes at 256 and 314 cm−1 are assigned to phosphorus clusters and disorder-activated scattering, respectively. The frequency of the A1 (LO) mode is found to decrease with increasing x at a much high rate of approximately 268 cm−1/x for x<0.03. This red shift is attributed to the effects of alloying and strain. Furthermore, we have not observed characterizations related to GaP resulted from the phase separation from PL, XRD and Raman spectra of all investigated GaN1−xPx samples.

Structural Properties of Gan1-Xpx Films

Characterization of GaN1−xPx Alloys Grown by Metal-Organic Chemical Vapor Deposition

Raman Studies of Phosphorus Incorporation in GaN1−xPx Alloys

Optical and Structural Properties of GaN1-xPx Ternary Alloys

Infrared Reflectance of Gan1-Xpx Ternary Alloys Grown by Metalorganic Chemical Vapor Deposition

Structure properties of GaN1-xPx ternary alloys grown by metal-organic chemical vapor deposition

Raman and Infrared Spectra Study of GaN1-xPx Ternary Alloys Grown by MOCVD

Growth of BN1-xPx Films by HF-PECVD

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Infrared Spectrum of GaN1-xPx Ternary Alloy

GaN1−xPx Ternary Alloys with High P Composition Grown by Metal-Organic Chemical Vapor Deposition

Phosphor induced optical band gap modulation of BPxN1-x films

Optical and Structural Properties of Cr-Doped Gan Grown by Hvpe Method

Deposition of BPx N1-x Thin Films and Study on the Influence of Phosphorus for Its Bandgap Modulation

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

Structural, Optical and Magnetic Properties of Ga1−xMnxN Films Grown by MOCVD

Structural And Magnetic Properties In Mn-Doped Gan Grown By Metal Organic Chemical Vapor Deposition

Infrared studies of GaN1-xPx ternary alloys

Properties of GaN film grown by hydride vapor phase epitaxy

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Structural and optical characterization of GaN films grown by metalorganic chemical vapor deposition