Structure properties of GaN1-xPx ternary alloys grown by metal-organic chemical vapor deposition

Chen, D.J.,Shen, B.,Xu, F.J.,Tao, Y.Q.

DOI: https://doi.org/10.1109/IWJT.2004.1306795

2004-01-01

Abstract:GaN-rich side of GaN1-xPx ternary alloys have been successfully synthesized by light-radiation heating and low-pressure metal-organic chemical vapor deposition. The Ga 3d and P 2p core level peaks of the GaN1-xPx films show that P atoms in GaN1-xPx do partly occupy the N site but also is incorporated as interstitials of GaN1-xPx by means of X-ray photoelectron spectroscopy. X-ray diffraction spectra show that the (0002) peak of GaN1-xPx shifts to smaller angle with increasing P composition and the GaN1-xPx films are still of a typical hexagonal structure. The Raman spectra of GaN1-xPx films, recorded in backscattering geometry, exhibit four new vibrational modes at 256, 314, 377 and 428 cm-1 compared with an undoped GaN sample. Those modes are assigned to the so called quasi-local mode induced by P in GaN, disorder-activated scattering and gap modes related to the Ga-P bond vibrations, respectively.