Abstract:The photoluminescence (PL) and photoluminescence excitation spectra (PLE) of selected InxGa1-xN samples grown by metal organic chemical vapor deposition (MOCVD) have been investigated, and the analysis of structural and optical behaviors has been taken to study the existence of the microstructure InGaN alloys on the basis of X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements.XRD reveals that the sample is a single crystalline InxGa1-xN film formed predominantly in (0002) direction, the In mole composition x in InxGa1-xN film is calculated to be about 0.2 according to the Bragg's angle of InxGa1-xN (0002). The AFM plane-view and 3D images of the selected In0.2Ga0.8N sample show almost uniform island-like microstructure appearing to be composed of granular-crystalline in nanometer scale. The islands composed of the grapes-like have an average height of 10 nm at most and a mean size of 300 nm. The self-organized microstructure appeared to form cone and/or pyramid shape and tended to agglomerate island-like surface with RMS roughness about 10 nm, which attributed to Stranski-Krastanov growth mechanism. The comparison between PLE and PL under different exciting or monitoring energy allows determining the existence of wetting layer (WL)in the sample. The PLE and PL measurements show that the resonant absorption is related to the band gap and wetting layer of the alloy at different exciting and monitoring energy. It has been found that PLE peaks of the In0.2Ga0.8N alloy are dominated by 365 nm and 474 nm with monitoring wavelength 545 nm and 493 nm; the broad 545 nm and narrow 493 nm emission peaks are originated from In(Ga)N wetting layer and InGaN region respectively. The structural and optical analyses suggest that the origin of the exciton localization center is the self-formed islands. Hence, the irrelevancy of the PL spectra to the gap energy was explained in terms of fluctuation resulting from variations in grain size or shape. This type of localized center provides another physical model for the proposed localized states in InxGa1-xN epilayers. Further characterization of the InGaN systems is underway to help fully understand the correlation between the structural and the optical pro-perties of self-organized micro-structure of InGaN system.

Optical Properties of Phase-Separated GaN 1− X P X Alloys Grown by Light-Radiation Heating Metal-Organic Chemical Vapour Deposition

Phase-separation Suppression in GaN-rich Side of GaNP Alloys Grown by Metal–organic Chemical Vapor Deposition

Optical and Structural Properties of GaN1-xPx Ternary Alloys

Characterization of GaN1−xPx Alloys Grown by Metal-Organic Chemical Vapor Deposition

GaN1−xPx Ternary Alloys with High P Composition Grown by Metal-Organic Chemical Vapor Deposition

Optical Study of Electronic States in Gaasn

Study of Photoluminescence and Absorption in Phase-Separation InGaN Films

Infrared Reflectance of Gan1-Xpx Ternary Alloys Grown by Metalorganic Chemical Vapor Deposition

Raman Studies of Phosphorus Incorporation in GaN1−xPx Alloys

Structure properties of GaN1-xPx ternary alloys grown by metal-organic chemical vapor deposition

Structural and Optical Properties of AlxGa1−xN (0.33 ≤ X ≤ 0.79) Layers on High-Temperature AlN Interlayer Grown by Metal Organic Chemical Vapor Deposition

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Radiative Recombination Mechanism of Carriers in InGaN/AlInGaN Multiple Quantum Wells with Varying Aluminum Content

Investigation on Optical and Micro-structural Properties of Inx Ga1-x N Alloys Grown by MOCVD

Infrared Spectrum of GaN1-xPx Ternary Alloy

Low Temperature Photoluminescence Properties of InGaN Films Grown on (0 1 2) Al2O3 and (0 0 0 1) Al2O3 Substrates by Low Pressure MOVPE

The temperature dependence of optical properties of InGaN alloys

Infrared studies of GaN1-xPx ternary alloys

Optical Study of Localized and Delocalized States in Gaasn/Gaas

Low temperature photoluminescence properties of InGaN films grown on (01(1)over-bar2) Al2O3 and (0001) Al2O3 substrates by low pressure MOVPE

Alloy States in Dilute GaAs1−xNx Alloys (X<1%)