Abstract:High-quality GaN films on nanoscale patterned sapphire substrates (NPSSs) are required for micro-light-emitting diode (micro-LED) display. In this study, two types of nucleation layers (NLs), including in situ low-temperature grown GaN (LT-GaN) and ex situ physical vapour deposition AlN (PVD-AlN), are applied on cone-shaped NPSS. The coalescence process of GaN grains on the NPSS is modulated by adjusting the three-dimensional (3D) growth temperatures. Results show that low 3D temperatures help to suppress the Ostwald ripening of GaN grains on the NPSS, facilitating the uniform distribution of 3D GaN grains. Higher 3D temperatures lead to a decrease in the edge dislocation density, accompanied by an increase in residual compressive stress. Compared with LT-GaN NLs, PVD-AlN NLs can effectively improve the growth uniformity, suppress the tilting and twisting of GaN grains grown on NPSSs, and promote the orientation consistency of crystal facets during coalescence. The GaN films grown on NPSSs with PVD-AlN NLs exhibit a decrease in the coalescence time from 2000 s to 500 s, a reduction in dislocation densities from 2.8 x 108 cm-2 to 1.4 x 108 cm-2, and an increase in the residual compressive stress from 0.98 GPa to 1.41 GPa compared to those grown on LT-GaN NLs. This study elucidates trends in dislocation and stress evolution in GaN films on NPSSs with analysis of grain coalescence. The effect of grain coalescence on the dislocation and stress in GaN films grown on nanoscale patterned sapphire substrates with low-temperature grown GaN and physical vapour deposition AlN nucleation layers is comparably investigated.

Phase-separation Suppression in GaN-rich Side of GaNP Alloys Grown by Metal–organic Chemical Vapor Deposition

Optical Properties of Phase-Separated GaN 1− X P X Alloys Grown by Light-Radiation Heating Metal-Organic Chemical Vapour Deposition

Characterization of GaN1−xPx Alloys Grown by Metal-Organic Chemical Vapor Deposition

GaN1−xPx Ternary Alloys with High P Composition Grown by Metal-Organic Chemical Vapor Deposition

Phase separation in AlGaN/GaN heterojunction grown by metalorganic chemical vapor deposition

Optical and Structural Properties of GaN1-xPx Ternary Alloys

Structure properties of GaN1-xPx ternary alloys grown by metal-organic chemical vapor deposition

Gas-phase Parasitic Reactions and Al Incorporation Efficiency in Light Radiation Heating, Low-Pressure Metal–organic Chemical Vapor Deposition of AlGaN

Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates

The Solubility of Phosphorus in GaN

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Raman Studies of Phosphorus Incorporation in GaN1−xPx Alloys

Discovering the Incorporation Limits for Wurtzite AlPyN1-y Grown on GaN by Metalorganic Vapor Phase Epitaxy

Study of Photoluminescence and Absorption in Phase-Separation InGaN Films

Phase Separation in Gan/Algan Quantum Dots

Synthesis of ZnAl 2 O 4 /Α-Al 2 O 3 Complex Substrates and Growth of GaN Films

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD

Synthesis of ZnAl2O4/alpha-Al2O3 complex substrates and growth of GaN films

Infrared Reflectance of Gan1-Xpx Ternary Alloys Grown by Metalorganic Chemical Vapor Deposition

Effect of Grain Coalescence on Dislocation and Stress in GaN Films Grown on Nanoscale Patterned Sapphire Substrates