Abstract:GaN quantum dots embedded in nanowires have attracted much attention due to their superior optical properties. However, due to the large surface-to-volume ratio of the nanowire, the impacts of surface states are the primary issue responsible for the degradation of internal quantum efficiency (IQE) in heterostructured dot-in-nanowires. In this paper, we investigate the carrier recombination mechanism of GaN/AlN dot-in-nanowires with an in situ grown AlN shell structure. Ultraviolet photoelectron spectroscopy (UPS) measurements were performed to describe the band bending effect on samples with different shell thicknesses. Temperature-dependent photoluminescence (TDPL) data support that increasing the AlN shell thickness is an efficient way to improve internal quantum efficiency. Detailed carrier dynamics was analyzed and combined with time-resolved photoluminescence (TRPL). The experimental data are consistent with our physical model that the AlN shell can effectively flatten the band bending near the surface and isolate the surface non-radiative recombination center. Our systematic research on GaN/AlN quantum dots in nanowires with a core–shell structure may significantly advance the development of a broad range of nanowire-based optoelectronic devices.

Phase Separation in Gan/Algan Quantum Dots

Phase separation in AlGaN/GaN heterojunction grown by metalorganic chemical vapor deposition

Nanometer-scale Phase Separation in Al60Ge30Mn10 Amorphous Alloy

Quasi-bound states and continuum absorption background of polar Al0.5Ga0.5N/GaN quantum dots

Nanoscale Effects on Heterojunction Electron Gases in GaN/AlGaN Core/Shell Nanowires

Optical Properties of Phase-Separated GaN 1− X P X Alloys Grown by Light-Radiation Heating Metal-Organic Chemical Vapour Deposition

Formation of M-Plane Ingan/Gan Quantum Dots Using Strain Engineering of Algan/Aln Interlayers

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Phase-separation Suppression in GaN-rich Side of GaNP Alloys Grown by Metal–organic Chemical Vapor Deposition

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Evidence for Phase-Separated Quantum Dots in Cubic InGaN Layers from Resonant Raman Scattering

Microscopic Structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based Quantum-well

In situ resonant x-ray study of vertical correlation and capping e ects during GaN/AlN quantum dots growth

Structural And Optical Properties Of M-Plane Gan/Algan Quantum Wires Grown By Metalorganic Chemical Vapor Deposition

Microscopic Structure of Al_(0.15)In_(0.01)Ga_(0.84)N/In_(0.2)Ga_(0.8)N and In_(0.2)Ga_(0.8)N/GaN of GaN-based Quantum-well

Scattering Behaviour of A Two-Dimensional Electron Gas Induced by Al Composition Fluctuation in Alxga1-Xn Barriers in Alxga1-Xn/Gan Heterostructures

Studies on the Composition of Ingan/Aln Quantum Dots Grown by Molecular Beam Epitaxy

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

Exciton states in strained GaN/AlxGa1-xN quantum dots

Ab initio phase diagram and nucleation of gallium