Abstract:GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [\begin{document}$0\bar 110$\end{document}]. The ratio of source materials- and time-depented growth mechanism was also studied. It was suggested that the transformation of the cross section from triangle to square structure should be derived from the growth mechanism change from vapor-liquid-solid(VLS)process to vapor-solid(VS)process. The doped Mg increased the growth rate of the nanowires sidewalls, which led to a symmetrically growth of GaN nanowires along the twin boundaries. GaN nanowires gradually transformed to square structure by auto-catalytic growth. Moreover, the property of field emission were further investigated. The results showed that the turn-on electric field of square-shaped GaN nanowires was 5.2 V/m and a stable field emission property at high electric field. This research provides a new method for the preparation of square-shaped GaN nanowires and a prospective way for the design and fabrication of novel nano-scale devices.

Structural And Optical Properties Of M-Plane Gan/Algan Quantum Wires Grown By Metalorganic Chemical Vapor Deposition

Formation of M-Plane Ingan/Gan Quantum Dots Using Strain Engineering of Algan/Aln Interlayers

Microscopic Structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based Quantum-well

Epitaxial Growth And Structural Analysis Of Aln/Gan Heterostructures

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Microscopic Structure of Al_(0.15)In_(0.01)Ga_(0.84)N/In_(0.2)Ga_(0.8)N and In_(0.2)Ga_(0.8)N/GaN of GaN-based Quantum-well

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on γ-LiAlO <sub>2</sub>

Spatially Resolved Luminescence Investigation of Algaas/Gaas Single Quantum Wires Modified by Selective Implantation and Annealing

Optical Study Of Bandedge Blue-Shift In Algan/Gan Double Quantum Wells

Electronic Structure of Nanometer-Scale Semiconductor Wires

Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy

Structural and Optical In-Plane Anisotropy of M-Plane GaN

Gan Grown on Ain/Sapphire Templates

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on ?-LiAlO2

Structural And Optical Properties Of Nonpolar M-Plane Gan And Gan-Based Leds On Gamma-Lialo2

Algan/Gan Heterostructure Grown By Metalorganic Vapor Phase Epitaxy

Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Nanometer Scale Spectral Imaging of Quantum Emitters in Nanowires and Its Correlation to Their Atomically Resolved Structure