Abstract:AlGaN is a key material for deep ultraviolet optoelectronic and electronic devices. With the increase of the Al composition ratio, the phase separation on the surface, caused by small-scale compositional fluctuations, is prone to affecting the performance of the device. In order to explore the mechanism of the phase separation on a nanoscale, the AlGaN wafers with different quantities of Al compositions are investigated by the confocal photoluminescence spectroscopy and the single-pass Kelvin force probe microscopy. The composition ratios of Al for the three samples are about 0.3, 0.5, and 0.7, respectively. The single-pass Kelvin force probe microscopy based on dual-frequency phase-locking is used to obtain high spatially resolved (about 10 nm) surface potential images. In the area where the phase separation phenomenon is obvious in the photoluminescence spectrum, the sharp change of the surface potential can be observed at the irregular steps and the edges of the surface pits. The potential changes can be ascribed to the inhomogeneous composition distribution. In the area where the topography turns into step flow, the surface pits shrink and merge. No obvious surface potential domain boundaries appear at the steps nor on the edges of the surface pits. Meanwhile, the phase separation phenomenon in the photoluminescence spectrum almost disappears. Our experiments show that the steps and the edges of the surface pits on AlGaN surfaces are main reasons for small-scale compositional fluctuations and the phase separation in the spectrum. Combining with in-situ confocal photoluminescence spectra, high spatially resolved surface potential image by single-pass Kelvin force probe microscopy is an effective method to characterize the phase separation on AlGaN surface on a nanoscale.

Phase separation in AlGaN/GaN heterojunction grown by metalorganic chemical vapor deposition

Phase Separation in Gan/Algan Quantum Dots

Nanoscale phase separation on an AlGaN surface characterized by scanning diffusion microscopy

Characterization of Phase Separation on AlGaN Surfaces by In-Situ Photoluminescence Spectroscopy and High Spatially Resolved Surface Potential Images

Phase Seperation of InGaN Films Grown by MOCVD

Phase-separation Suppression in GaN-rich Side of GaNP Alloys Grown by Metal–organic Chemical Vapor Deposition

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Algan/Gan Heterostructure Grown By Metalorganic Vapor Phase Epitaxy

Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD

Interfaces in heterostructures of AlInGaN/GaN/ Al2O3

Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition

Phase Separation Resulting from Mg Doping in p-InGaN Film Grown on GaN/Sapphire Template

Growth of AlGaN under the conditions of significant gallium evaporation: phase separation and enhanced lateral growth

Growth and Characterization of AlGaN/GaN Heterostructure Using Unintentionally Doped AlN/GaN Superlattices As Barrier Layer

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

AlGaN/GaN heterostructure on Si (111) substrate grown by MOCVD

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Phase Separation In Strained Epitaxial Ingan Islands

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN

Microstructure Study on Heterostructures of Alingan/Gan/Al2o3 by Using Rutherford Backscattering/Channelling and Xrd