Abstract:Annealing Mg-implanted homoepitaxial GaN at temperatures above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects, in the form of inversion domains, contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N2 overpressure), which results in a low dopant activation efficiency. Triple-axis x-ray data reveal that implant-induced strain is fully relieved after annealing at 1300 °C for 10 min, indicating that strain-inducing point defects formed during implantation have reconfigured and inversion domains are formed. However, annealing at temperatures of 1400–1500 °C (one GPa N2 overpressure) eliminates the presence of the inversion domains. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop density is observed after annealing at the higher temperatures and longer times. Additionally, once inversion domains are formed and the samples are cooled to room temperature, they are shown to dissolve with subsequent annealing above 1400 °C. While such defects have been observed before, the important finding that such defects can be dissolved with a short, higher temperature step is key. Earlier work [Breckenridge et al., J. Appl. Phys. Lett. 118, 022101 (2021)] addressing electrical measurements of these types of samples showed that annealing at 1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements earlier work by identifying the inversion domains, which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (>1400 °C) annealing cycles to activate Mg in GaN, even if the Mg-containing inversion domains had been formed during lower temperature annealing.

Phase Separation Resulting from Mg Doping in p-InGaN Film Grown on GaN/Sapphire Template

Growth and Properties of Mg-doped In-polar InN Films

Influence of Mg doping on In adsorption and In incorporation in (In,Ga)N superlattices

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Observation of 2D-magnesium-intercalated gallium nitride superlattices

Phase separation in AlGaN/GaN heterojunction grown by metalorganic chemical vapor deposition

Polarity Inversion in High Mg-Doped In-Polar Inn Epitaxial Layers

Transition of Dominant Lattice Sites of Mg in InN:Mg Revealed by Raman Scattering

Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Phase Seperation of InGaN Films Grown by MOCVD

Systematic Study on P-Type Doping Control of Inn with Different Mg Concentrations in Both in and N Polarities

Effect of Mg Doping on Enhancement of Terahertz Emission from Inn with Different Lattice Polarities

Study on Mg-doped AlGaN Films Grown by Metal Organic Chemical Vapor Deposition

Effects of Cp 2 Mg molar flow rate on structural, optical, and electrical properties of semipolar Mg-doped p-AlGaN epi-layers

Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation

Improved-Sensitivity Integral SQUID Magnetometry of (Ga,Mn)N Thin Films in Proximity to Mg-doped GaN

Electrical Properties of Ingan Grown by Molecular Beam Epitaxy

Study of the heavily p-type doping of cubic GaN with Mg

Effect of Indium-Doped Interlayer on the Strain Relief in GaN Films Grown on Si(111)

Variation of Band Bending at the Surface of Mg-Doped Ingan: Evidence of P-Type Conductivity Across the Composition Range

Threading dislocation and lattice stress modulation of Si based GaN material with AlPN nucleation layer