Effect of Indium-Doped Interlayer on the Strain Relief in GaN Films Grown on Si(111)

Jerry J. Wu,Lifeng Zhao,Guoyi Zhang,Xianglin Liu,Qihe Zhu,Zhanguo Wang,Quanjie Jia,Liping Guo,Tiandou Hu

DOI: https://doi.org/10.1002/pssa.200723162

2008-01-01

Abstract:Crack‐free GaN films have been achieved by inserting an In‐doped low‐temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X‐ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In‐doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)