Abstract:Plastic strain relaxation in epitaxial layers is one of the crucial factors that limits the performance of III-nitride-based heterostructures. In this work, we report on strain relaxation and crystalline defects in heterostructures consisting of compositionally graded AIGaN epitaxial layers tensile strained between a GaN-buffer and a GaN-cap. We demonstrate the effects of Al concentration and the shape of the concentration-depth profile in the buried graded layers on the accumulated elastic strain energy and how this influences the critical thickness for crack generation or fracture. It is shown that this fracture leads to the formation of partially relaxed regions with their degree of strain relaxation directly related to the density of cracks. Nevertheless, even though the in-plane coherency between the AIGaN layer and the GaN-buffer is broken, the in-plane coherency within the AIGaN layer is preserved for all regions. Furthermore, the tensile strain released in the buried graded AIGaN layers is consistent with compressive strain induced in the GaN-cap layers. Finally, the localized stress and the densities of threading dislocations are correlated with the features of the resulting fractured heterostructures. These results are important toward the control of complex plastic strain relaxation and further facilitate the growth of high quality compositionally graded AIGaN-based devices.

Theoretical Study on Critical Thicknesses of InGaN Grown on (0001) GaN

Effect Of Critical Thickness On Structural And Optical Properties Of Inxga1-Xn/Gan Multiple Quantum Wells

Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties

Effect of Indium-Doped Interlayer on the Strain Relief in GaN Films Grown on Si(111)

Equilibrium Critical Thickness for A Wurtzite Ingan/Gan Heterostructure

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Crystalline Quality of InxAl1-xN with Different Indium Contents Around Lattice-Matched to GaN

Characteristic Analysis of Undoped GaN Films with Different Thickness

Determination of the critical layer thickness in the InGaN/GaN heterostructures

Crystallization behavior and defect analysis on induction growth of hexagonal GaN in isothermal relaxation

Study of Dislocation Densities of Thick GaN Films

Transmission Electron Microscopy Study of Epitaxial InN Thin Films Grown on C -Plane Sapphire

Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers

Growth Behavior of High-Indium-Composition InGaN Quantum Dots Using Growth Interruption Method

Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy

Abnormal InGaN Growth Behavior in Indium-Desorption Regime in Metalorganic Chemical Vapor Deposition

Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations

The Influence of Growth Temperature and Input V/III Ratio on the Initial Nucleation and Material Properties of InN on GaN by MOCVD

Evaluation of Both Composition and Strain Distributions in InGaN Epitaxial Film Using X-Ray Diffraction Techniques