Determination of the critical layer thickness in the InGaN/GaN heterostructures

C. A. Parker,J. C. Roberts,S. M. Bedair,M. J. Reed,S. X. Liu,N. A. El-Masry

DOI: https://doi.org/10.1063/1.125146

IF: 4

1999-11-01

Applied Physics Letters

Abstract:We present an approach to determine the critical layer thickness in the InxGa1−xN/GaN heterostructure based on the observed change in the photoluminescence emission as the InxGa1−xN film thickness increases. From the photoluminescence data, we identify the critical layer thickness as the thickness where a transition occurs from the strained to unstrained condition, which is accompanied by the appearance of deep level emission and a drop in band edge photoluminescence intensity. The optical data that indicate the onset of critical layer thickness, was also confirmed by the changes in InxGa1−xN surface morphology with thickness, and is consistent with x-ray diffraction measurements.

physics, applied