Abstract:Monoclinic gallium oxide ($\ensuremath{\beta}\text{\ensuremath{-}}\mathrm{G}{\mathrm{a}}_{2}{\mathrm{O}}_{3}$) has important applications in power devices and deep UV optoelectronic devices because of such novel properties as a wide band gap, high breakdown electric field, and a wide range of $n$-type doping conductivity. However, the intrinsic failure mechanisms of $\ensuremath{\beta}\text{\ensuremath{-}}\mathrm{G}{\mathrm{a}}_{2}{\mathrm{O}}_{3}$ remain unknown, which limits the fabrication and packaging of $\ensuremath{\beta}\text{\ensuremath{-}}\mathrm{G}{\mathrm{a}}_{2}{\mathrm{O}}_{3}$-based electronic devices. Here we used density-functional theory at the Perdew-Burke-Ernzerhof level to examine the shear-induced failure mechanisms of $\ensuremath{\beta}\text{\ensuremath{-}}\mathrm{G}{\mathrm{a}}_{2}{\mathrm{O}}_{3}$ along various plausible slip systems. We found that the $(001)/\ensuremath{\langle}010\ensuremath{\rangle}$ slip system has the lowest ideal shear strength of 3.8 GPa among five plausible slip systems, suggesting that $(001)/\ensuremath{\langle}010\ensuremath{\rangle}$ is the most plausible activated slip system. This slip leads to an intrinsic failure mechanism arising from breaking the longest Ga\ensuremath{-}O bond between octahedral Ga and fourfold-coordinated O. Then we identified the same failure mechanism of $\ensuremath{\beta}\text{\ensuremath{-}}\mathrm{G}{\mathrm{a}}_{2}{\mathrm{O}}_{3}$ under biaxial shear deformation that mimics indentation stress conditions. Finally, the general stacking fault energy (SFE) surface is calculated for the (001) surface from which we concluded that there is no intrinsic stacking fault structure for $\ensuremath{\beta}\text{\ensuremath{-}}\mathrm{G}{\mathrm{a}}_{2}{\mathrm{O}}_{3}$. The deformation modes and SFE calculations are essential to understand the intrinsic mechanical processes of this semiconductor material, which provides insightful guidance for designing high-performance semiconductor devices.

Fracture Toughness and Critical Thickness of β-(InxGa1-x)2O3 / Ga2O3 by First Principles

Effective Band Structure and Crack Formation Analysis in Pseudomorphic Epitaxial Growth of (In x Ga 1- x ) 2 O 3 Alloys: A First-Principles Study

Oxygen-close-packed (310)-Plane Substrates of Β-Ga2o3 Grown by the Casting Method

Deformation and fracture behaviors of monocrystalline β-Ga 2 O 3 characterized using indentation method and first-principles calculations

The Anisotropy of Deformation Behaviors in (100) and (010) Plane of Monoclinic 8-Ga2o3 Single Crystals

The Anisotropy of Deformation Behaviors in (100) and (010) Plane of Monoclinic Β-Ga2o3 Single Crystals

Orientation-dependent atomic-scale mechanism and defect evolution in β-Ga2O3 thin film epitaxial growth

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

Molecular beam epitaxy of single-crystalline bixbyite (In$_{1-x}$Ga$_x$)$_2$O$_3$ films ($x \leq 0.18$): Structural properties and consequences of compositional inhomogeneity

The electrical conductivity of cubic (In$_{1-x}$Ga$_x$)$_2$O$_3$ films ($x\le0.18$): Native point defects, Sn-doping, and the surface electron accumulation layer

Stability and Electronic Properties of Two-Dimensional Ga2O3 and (Mxga1-X)2o3 (M = Al, Ga) Alloys

Microstructural Analysis of Heteroepitaxial Β-Ga2o3 Films Grown on (0001) Sapphire by Halide Vapor Phase Epitaxy

Composition analysis of β-(InxGa1-x)2O3 thin films coherently grown on (010) β-Ga2O3 via mist CVD

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Al Coordination and Ga Interstitial Stability in a β-(Al0.2Ga0.8)2O3 Thin Film

Orientation-dependent surface radiation damage in $β$-Ga2O3 explored by multiscale atomic simulations

Investigating the ranges of (meta)stable phase formation in (InxGa1-x)2O3: Impact of the cation coordination

Low In solubility and band offsets in the small-$x$ $β$-Ga$_2$O$_3$/(Ga$_{1-x}$In$_x$)$_2$O$_3$ system

Research on the crystal phase and orientation of Ga2O3 Hetero-epitaxial film

Shear-induced Mechanical Failure of Β − G a 2 O 3 from Quantum Mechanics Simulations

The anisotropy dependence of deformation mechanism of cleavage planes in β-Ga2O3 single crystal