Abstract:Understanding the band structure evolution of (AlxGa1−x)2O3 alloys is of fundamental importance for developing Ga2O3-based power electronic devices and vacuum ultraviolet super-radiation hard detectors. Here, we report on the bandgap engineering of β-(AlxGa1−x)2O3 thin films and the identification of compositionally dependent electronic band structures by a combination of absorption spectra analyses and density functional theory calculations. Single-monoclinic β-phase (AlxGa1−x)2O3 (0 ≤ x ≤ 0.54) films with a preferred (−201) orientation were grown by laser molecular beam epitaxy with tunable bandgap ranging from 4.5 to 5.5 eV. The excellent fitting of absorption spectra by the relation of (αhν)1/2 ∝ (hν-E) unambiguously identifies that β-(AlxGa1−x)2O3 alloys are indirect bandgap semiconductors. Theoretical calculations predict that the indirect nature of β-(AlxGa1−x)2O3 becomes more pronounced with increased Al composition due to the increased eigenvalue energy gap between M and Г points in the valence band. The experimentally determined indirect bandgap exhibits almost a linear relationship with Al composition, which is consistent with the theoretical calculation and indicates a small bowing effect and a good miscibility. The identification and modulation of (AlxGa1−x)2O3 band structures allows rational design of ultra-wide bandgap oxide heterostructures for the applications in power electronics and solar-blind or X-ray detection.Understanding the band structure evolution of (AlxGa1−x)2O3 alloys is of fundamental importance for developing Ga2O3-based power electronic devices and vacuum ultraviolet super-radiation hard detectors. Here, we report on the bandgap engineering of β-(AlxGa1−x)2O3 thin films and the identification of compositionally dependent electronic band structures by a combination of absorption spectra analyses and density functional theory calculations. Single-monoclinic β-phase (AlxGa1−x)2O3 (0 ≤ x ≤ 0.54) films with a preferred (−201) orientation were grown by laser molecular beam epitaxy with tunable bandgap ranging from 4.5 to 5.5 eV. The excellent fitting of absorption spectra by the relation of (αhν)1/2 ∝ (hν-E) unambiguously identifies that β-(AlxGa1−x)2O3 alloys are indirect bandgap semiconductors. Theoretical calculations predict that the indirect nature of β-(AlxGa1−x)2O3 becomes more pronounced with increased Al composition due to the increased eigenvalue energy gap between M and Г points in the valence b...

Low In solubility and band offsets in the small-$x$ $β$-Ga$_2$O$_3$/(Ga$_{1-x}$In$_x$)$_2$O$_3$ system

Effective Band Structure and Crack Formation Analysis in Pseudomorphic Epitaxial Growth of (In x Ga 1- x ) 2 O 3 Alloys: A First-Principles Study

Band Alignment of In2O3/β-Ga2O3 Interface Determined by X-ray Photoelectron Spectroscopy

Investigating the ranges of (meta)stable phase formation in (InxGa1-x)2O3: Impact of the cation coordination

Fracture Toughness and Critical Thickness of β-(InxGa1-x)2O3 / Ga2O3 by First Principles

Computational design of optimal heterostructures for $β$-Ga$_2$O$_3$

Indium defect complexes in (In x Ga 1−x ) 2 O 3 : A combined experimental and hybrid density functional theory study

Band offsets at the interfaces between $β$-Ga$_2$O$_3$ and Al$_2$O$_3$

Band gap and band offset of Ga$_2$O$_3$ and (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys

Effective Electronic Structure of Monoclinic $β-(Al_xGa_{1-x})_2O_3$ alloy semiconductor

Band Alignment of SiO2/(Al Ga1-)2O3 (0 ≤x≤ 0.49) Determined by X-ray Photoelectron Spectroscopy

Band Offsets at β/γ-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ Interface

Al Coordination and Ga Interstitial Stability in a β-(Al0.2Ga0.8)2O3 Thin Film

First-principles Calculations of Band-Gap Properties of Zinc-Blende B X Ga 1-X N and B X Ga 1-X N Y As 1-Y Alloys

Compositional effects on structural, electronic, elastic, piezoelectric and dielectric properties of GaInN alloys: a first-principles study

The electrical conductivity of cubic (In$_{1-x}$Ga$_x$)$_2$O$_3$ films ($x\le0.18$): Native point defects, Sn-doping, and the surface electron accumulation layer

Band Alignment of Indium–gallium–zinc Oxide/β-Ga2o3 $(\bar{2}01)$ Heterojunction Determined by Angle-Resolved X-ray Photoelectron Spectroscopy

Bandgap Tailoring of Monoclinic Single-Phase -(Alxga1-x)2o3 (0 X 0.65) Thin Film by Annealing -Ga2o3/al2o3 Heterojunction at High Temperatures

Identification and modulation of electronic band structures of single-phase β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> alloys grown by laser molecular beam epitaxy

Band Offsets of Al2O3/InxGa1−xAs (x=0.53 and 0.75) and the Effects of Postdeposition Annealing

Computational design of optimal heterostructures for