Abstract:Semiconductors with wide band gap (3.0 eV), high dielectric constant (> 10), good thermal dissipation, and capable of $n$- and $p$-type doping are highly desirable for high-energy power electronic devices. Recent studies indicate that $\rm ZnGa_2O_4$ may be suitable for these applications, standing out as an alternative to $\rm Ga_2O_3$. The simple face centered cubic spinel structure of $\rm ZnGa_2O_4$ results in isotropic electronic and optical properties, in contrast to the large anisotropic properties of the $\beta$-monoclinic $\rm Ga_2O_3$. In addition, $\rm ZnGa_2O_4$ has shown, on average, better thermal dissipation and potential for $n$- and $p$-type conductivity. Here we use density functional theory and hybrid functional calculations to investigate the electronic, optical, and point defect properties of $\rm ZnGa_2O_4$, focusing on the possibility for $n$- and p-type conductivity. We find that the cation antisite $\rm Ga_{Zn}$ is the lowest energy donor defect that can lead to unintentional $n$-type conductivity. The stability of self-trapped holes (small hole polarons) and the high formation energy of acceptor defects make it difficult to achieve $p$-type conductivity. However, with excess of Zn, forming $\rm Zn_{(1+2x)}Ga_{2(1-x)}O_4$ alloys display an intermediate valence band, facilitating $p$-type conductivity. Due to the localized nature of this intermediate valence band, $p$-type conductivity by polaron hopping is expected, explaining the low mobility and low hole density observed in recent experiments.

Indium defect complexes in (In x Ga 1−x ) 2 O 3 : A combined experimental and hybrid density functional theory study

Hole conductivity through a defect band in $\rm ZnGa_2O_4$

Energetic, structural and electronic features of Sn-, Ga-, O-based defect complexes in cubic In2O3

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

The electrical conductivity of cubic (In$_{1-x}$Ga$_x$)$_2$O$_3$ films ($x\le0.18$): Native point defects, Sn-doping, and the surface electron accumulation layer

Investigating the ranges of (meta)stable phase formation in (InxGa1-x)2O3: Impact of the cation coordination

Effective Band Structure and Crack Formation Analysis in Pseudomorphic Epitaxial Growth of (In x Ga 1- x ) 2 O 3 Alloys: A First-Principles Study

Dopant-Dopant Interactions in Beryllium doped Indium Gallium Arsenide: an Ab Initio Study

Intrinsic defects and mid-gap states in quasi-one-dimensional Indium Telluride

Studies of the optical band positions, spin-Hamiltonian parameters and defect structure for Cr3+ in CdIn2S4 crystal

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

Indium Vacancy Induced D Ferromagnetism in Li-doped In2O3 Nanoparticles

Origin of subgap states in amorphous In-Ga-Zn-O

Defect-Induced Structural Disorder In Tetragonal Cu(In1-Xgax)(5)Se-8 Thin Films Investigated By Raman Spectroscopy: The Effect Of Ga Addition

Donor-induced electrically charged defect levels: examining the role of indium and n-type defect-complexes in germanium

Indium Substitution Effect On The Topological Crystalline Insulator Family (Pb1-Xsnx)(1-Y)Inyte: Topological And Superconducting Properties

The Solubility of Indium in Na2Ga7

Indium substitution effect on the topological crystalline insulator family (Pb$_{1-x}$Sn$_{x}$)$_{1-y}$In$_{y}$Te: Topological and superconducting properties

Defect-induced structural disorder in tetragonal Cu(In<sub>1 <i>x</i></sub>Ga<sub><i>x</i></sub>)<sub>5</sub>Se<sub>8</sub> thin films investigated by Raman spectroscopy: the effect of Ga addition

Low In solubility and band offsets in the small-$x$ $β$-Ga$_2$O$_3$/(Ga$_{1-x}$In$_x$)$_2$O$_3$ system

Characteristics of Doped Indium in Cd0.9Zn0.1Te Grown by the Bridgman Method