Abstract:CdO-Ga 2 O 3 alloy films (Cd 1-x Ga x O 1+δ ) over the whole composition range (x=0 to 1) were synthesized by room temperature radio frequency magnetron sputtering. We found that the intrinsic band gap of these alloys can be tuned in a wide range from 2.2 to 4.8 eV. As the Ga content increases to x>0.3 the alloy becomes entirely amorphous and the resistivity increases from 10 -3 to 10 -1 ohm-cm while the mobility decreases gradually from 15 (x=0.34) to 10 cm 2 /Vs (x=0.6). The resistivity of amorphous Cd 1-x Ga x O 1+δ films can be further controlled from 10 -3 to 10 2 ohm-cm by oxygen doping. Moreover, alloy films grown on plastic (PEN) substrate exhibit similar electrical and optical properties. These results suggest that amorphous Cd 1-x Ga x O 1+δ alloy films can potentially be used as highly conducting transparent conductors on flexible solar cells as well as gate electrodes with a wide bandgap tunabilty for transparent/flexible devices.

Origin of subgap states in amorphous In-Ga-Zn-O

Hole conductivity through a defect band in $\rm ZnGa_2O_4$

Modulation of Optical and Electrical Properties of Sputtering-Derived Amorphous Ingazno Thin Films by Oxygen Partial Pressure

Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

Transparent conducting amorphous CdO-Ga<inf>2</inf>O<inf>3</inf> films synthesized by room temperature sputtering

Indium defect complexes in (In x Ga 1−x ) 2 O 3 : A combined experimental and hybrid density functional theory study

Hydrogen Incorporation Modulates Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors

Energetic, structural and electronic features of Sn-, Ga-, O-based defect complexes in cubic In2O3

Hydrogen anion and subgap states in amorphous In–Ga–Zn–O thin films for TFT applications

The electrical conductivity of cubic (In$_{1-x}$Ga$_x$)$_2$O$_3$ films ($x\le0.18$): Native point defects, Sn-doping, and the surface electron accumulation layer

Density functional theory simulations of amorphous high-κ oxides on a compound semiconductor alloy: a-Al2O3/InGaAs(100)-(4×2), a-HfO2/InGaAs(100)-(4×2), and a-ZrO2/InGaAs(100)-(4×2)

Stability and gap states of amorphous In-Ga-Zn-Ox thin film transistors: Impact of sputtering configuration and post-annealing on device performance

Band Offsets in Zro2/Ingazno4 Heterojunction

Oxygen vacancy in ZnO- w phase: pseudohybrid Hubbard density functional study

Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

Correlating the Electronic Structures of Β-Ga2o3 to Its Crystal Tilts Induced Defects at Nanoscale

Electronic States of Gallium Oxide Epitaxial Thin Films and Related Atomic Arrangement

The granularity effect in amorphous InGaZnO$_4$ films prepared by rf sputtering method

Universal dependence on the channel conductivity of the competing weak localization and antilocalization in amorphous InGaZnO$_4$ thin-film transistors

Vacancy Defects in Ga2O3: First-Principles Calculations of Electronic Structure

Effective Band Structure and Crack Formation Analysis in Pseudomorphic Epitaxial Growth of (In x Ga 1- x ) 2 O 3 Alloys: A First-Principles Study