Abstract:Elastic strain engineering has proven to be an efficient tool to substantially modify the physical properties of semiconductors. Likewise, modification of properties by elastic strain based on 2D materials has drawn a considerable attention recently. While on ultrawide-bandgap (UWBG) materials, emergent alternatives for next-generation high-power and high-efficient electronic devices, there exist only a few experimental reports related to the strain modification of fundamental physical properties. According to the theoretical prediction, metallization and indirect-to-direct transition can be achieved in diamonds through elastic strain. In previous work, the modulation of bandgap and indirect-to-direct bandgap transition in 2D β-Ga2O3 under uniaxial strains were demonstrated. The present work reports a modified two-point bend method to apply the elastic strain to β-Ga2O3 material continuously without any damage in the crystal quality, and investigates the changes in bandgap caused by the strain-induced deformation. Free-standing β-Ga2O3 sheets exhibit a sizeable reduction in the bandgap of up to 30% (from 4.9 eV to 3.4 eV) under the bending state, as measured by X-ray photoelectron spectroscopy (XPS). Based on the predictions obtained from first-principles calculations, a strong anisotropic character in the Young's modulus of β-Ga2O3 indicates the existence of strain gradient in the free-standing β-Ga2O3 sheets under bending states, which was evinced by the confocal Raman spectroscopic measurements. Moreover, the lattice distortion caused by the strain gradient and elastic strain can be attributed to the dramatic changes in the bandgap. More importantly, in as-bent samples, the variation of bandgap was continuous and recoverable. These findings provide a direct experimental evidence of bandgap modification of β-Ga2O3 by elastic strain, and indicate a much larger and more versatile platform for the application of flexible Ga2O3 based devices to a wide range of application areas.

Correlating the Electronic Structures of Β-Ga2o3 to Its Crystal Tilts Induced Defects at Nanoscale

Atomic Defects in Two‐Dimensional Materials: from Single‐Atom Spectroscopy to Functionalities in Opto‐/Electronics, Nanomagnetism, and Catalysis

Wide-Field Spectral Super-Resolution Mapping of Optically Active Defects in Hexagonal Boron Nitride.

The Anisotropy of Deformation Behaviors in (100) and (010) Plane of Monoclinic 8-Ga2o3 Single Crystals

The Anisotropy of Deformation Behaviors in (100) and (010) Plane of Monoclinic Β-Ga2o3 Single Crystals

Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β-Ga_{2}O_{3}

Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor beta-Ga2O3

The anisotropy dependence of deformation mechanism of cleavage planes in β-Ga2O3 single crystal

In Situ Structural Dynamics of Atomic Defects in Tungsten Oxide

Orientation-dependent atomic-scale mechanism and defect evolution in β-Ga2O3 thin film epitaxial growth

Electronic Band Structures And Native Point Defects Of Ultrafine Zno Nanocrystals

Effects of line defects on the electronic and optical properties of strain-engineered WO3 thin films

Elastic strain modulation of energy bandgap in β-Ga2O3 sheet: Experimental and computational investigations

Sub-nanometer-scale Mapping of Crystal Orientation and Depth-Dependent Structure of Dislocation Cores in SrTiO3

Creating Continuously Graded Microstructures with Electric Fields via Locally Altering Grain Boundary Complexions

Unraveling evolution of microstructural domains in the heteroepitaxy of β -Ga2O3 on sapphire

Defect energy levels in monoclinic β-Ga2O3

Advancing Understanding of Structural, Electronic, and Magnetic Properties in 3D-Transition-metal TM-doped Α-Ga2o3 (TM = V, Cr, Mn, and Fe): A First-Principles and Monte Carlo Study

Colossal structural distortion and interlayer-coupling suppression in a van der Waals crystal induced by atomic vacancies

Insight into Electronic and Structural Reorganizations for Defect-Induced Vo2 Metal-Insulator Transition

Highly coherent grain boundaries induced by local pseudo-mirror symmetry in $β$-Ga2O3