Electronic Band Structures And Native Point Defects Of Ultrafine Zno Nanocrystals

Yu-Jia Zeng,Koen Schouteden,Mozhgan N. Amini,Shuang-Chen Ruan,Yang-Fan Lu,Zhi-Zhen Ye,Bart Partoens,Dirk Lamoen,Chris Van Haesendonck
DOI: https://doi.org/10.1021/acsami.5b02545
IF: 9.5
2015-01-01
ACS Applied Materials & Interfaces
Abstract:Ultrafine ZnO nanocrystals with a thickness down to 0.25 nm are grown by a metalorganic chemical vapor deposition method. Electronic band structures and native point defects of ZnO nanocrystals are studied by a combination of scanning tunneling microscopy/spectroscopy and first-principles density functional theory calculations. Below a critical thickness of nm ZnO adopts a graphitic-like structure and exhibits a wide band gap similar to its wurtzite counterpart. The hexagonal wurtzite structure, with a well-developed band gap evident from scanning tunneling spectroscopy, is established for a thickness starting from similar to 1.4 nm. With further increase of the thickness to 2 nm, V-O-V-Zn defect pairs are easily produced in ZnO nanocrystals due to the self-compensation effect in highly doped semiconductors.
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