Observation of the Defect States in Individual Co-Doped Zno Dilute Magnetic Semiconducting Nanostructures by Electron Energy-Loss Spectroscopy

Z. H. Zhang,H. L. Tao,L. L. Pan,Lin Gu,M. He,B. Song,Q. Li
DOI: https://doi.org/10.1016/j.scriptamat.2013.04.016
IF: 6.302
2013-01-01
Scripta Materialia
Abstract:Defects play a crucial role in room temperature ferromagnetism of dilute magnetic semiconductors. Using valence electron energy-loss spectroscopy (EELS), it was found that the band gap of Co-doped ZnO was smaller than undoped ZnO and some mid-gap states appeared. Using core-loss EELS, the fine structures of the O K-edge exhibit material-specific defect features in the oxygen spectra. The EELS measurements with super high spatial resolution provide unambiguous indications that defects are presented in Co-doped ZnO nanostructures. (c) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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